Temperature compensation attenuator

ABSTRACT

In one embodiment, a temperature compensating attenuator is disclosed having an attenuation circuit and a control circuit. The temperature compensating attenuator circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with an impedance attenuation level having a continuous impedance range. The control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the attenuation level of the attenuation circuit. The temperature compensating attenuator includes a temperature compensating circuit that compensates for variations in operation of the attenuation circuit due to a temperature change.

RELATED APPLICATIONS

This application claims the benefit of provisional patent applicationSer. No. 61/289,883, filed Dec. 23, 2009, and provisional patentapplication Ser. No. 61/384,763, filed Sep. 21, 2010, the disclosures ofwhich are hereby incorporated herein by reference in their entireties.

FIELD OF THE DISCLOSURE

The present disclosure relates to attenuators configured to havevariable impedance levels and methods of operating the same. The presentdisclosure also relates to attenuators that compensate for temperaturechanges during operation of the attenuator. The present disclosure alsorelated to attenuators having variable impedance levels that arecontrolled based on a temperature.

BACKGROUND

Attenuators are designed to introduce a known loss between two or morenodes in a circuit. Often, these devices are utilized in radio frequency(RF) circuits, audio equipment, and measuring instruments to lowervoltage, dissipate power, and/or for impedance matching. Attenuators maybe passive attenuators, variable attenuators, and/or temperaturecompensation attenuators. Passive attenuators are designed with passivecomponents, such as resistors, to introduce a designed loss between thenodes of a circuit. Passive attenuators generally have fixed impedancelevels. Unfortunately, passive attenuators are not dynamic and modifyingtheir impedance levels requires physically changing the passivecomponents in the passive attenuator.

Variable attenuators are capable of varying their impedance levels. Forexample, a digitally controlled attenuator (DCA), also known as a stepattenuator, may include a stack of transistors coupled to passivecomponents. These transistors act as switches and vary the impedancelevel by being turned on and off so as to introduce the attenuation ofthe passive components selected by the transistors. However, since theimpedance level of the digitally controlled attenuator can only vary inaccordance with the attenuation being introduced by the passivecomponents coupled to the transistors, the impedance levels of the DCAare discrete and thus the attenuation range of the DCA suffers from lowresolution.

Other variable attenuators, such as voltage controlled attenuators(VCA), include active components that allow the VCA's impedance level tovary within a continuous impedance range. These active components may,for example, be individual transistors placed in different circuitsegments of the VCA. Unfortunately, these types of VCA's suffer from ahigh degree of distortion. To ameliorate the distortion in the VCA,prior art VCA's use pin diodes and quadrature hybrid techniques. Thesetechniques however provide VCAs with very limited bandwidth. Also, thesesolutions are relatively expensive.

Thus, there remains a need for a variable attenuator with a high dynamicattenuation range and/or a wide bandwidth and low distortion that isrelatively inexpensive.

Temperature compensation attenuators are designed to compensate forvariations in attenuation caused by changes in temperature of theattenuation components of the attenuator. Generally, temperaturecompensation attenuators modify the operation of the attenuationcomponents to compensate for changes in attenuation that result fromchanges in temperature. Unfortunately, many temperature compensationattenuators also have very limited bandwidth and/or do not have lowdistortion or a control voltage that is easily adjustable to compensatefor temperature changes in the attenuator.

Accordingly, there remains a need for a temperature compensationattenuator with a dynamic attenuation range and/or a wide bandwidth andlow distortion that is relatively inexpensive.

Temperature controlled attenuators are designed to create a temperaturedependant attenuation that compensate for variations in gain of acascade of amplifiers, mixers and other electronic components caused bychanges in temperature of the components. Generally, temperaturecontrolled attenuators modify the operation of the attenuationcomponents to compensate for changes in gain of the other components inthe lineup that result from changes in temperature. Unfortunately, manytemperature controlled attenuators also have very limited bandwidthand/or do not have low distortion or an easily adjustable/programmabletemperature coefficient.

Accordingly, there remains a need for a temperature compensationattenuator with a dynamic attenuation range and/or a wide bandwidth andlow distortion that is relatively inexpensive.

SUMMARY OF THE DISCLOSURE

The present disclosure relates generally to variable attenuators andtemperature compensation attenuators. More specifically, the disclosurerelates to variable attenuators and temperature compensation attenuatorshaving dynamic attenuation ranges and/or wide bandwidth, and lowdistortion. In one embodiment, a variable attenuator includes anattenuation circuit having a first series connected attenuation circuitsegment and a first shunt connected attenuation circuit segment.Additional series connected and/or shunt connected attenuation circuitsegments may also be provided so that the attenuation circuit can bearranged as a Tee or Pi type attenuator if desired. Each attenuationcircuit segment in the attenuation circuit includes a plurality ofstacked transistors. The plurality of stacked transistors in eachattenuation circuit segment are coupled to provide the attenuationcircuit segment with a variable impedance level having a continuousimpedance range. By having a plurality of stacked transistors in eachattenuation circuit segment, the signal being attenuated by theattenuation circuit is distributed among each of the transistors in thestack. Furthermore, the width of the transistors may be increased tocompensate for the stacking of serial device. As a result, the stack oftransistors in each attenuation circuit segment can thus reducedistortion A control circuit may be operably associated with each of theplurality of stacked transistors to control the variable impedance levelof each of the attenuation circuit segments. The control circuitcontrols the variable impedance level in each attenuation circuitsegment based on the signal level of the attenuation control signal. Inthis manner, the variable impedance levels of each of the attenuationcircuit segments in the attenuation circuit may be controlled so thatthe variable attenuator is set at a desired impedance level.

In another embodiment, a temperature compensation attenuator includes anattenuation circuit having a first series connected attenuation circuitsegment and a first shunt connected attenuation circuit segment. As inthe variable attenuator described above, additional series connectedand/or shunt connected attenuation circuit segments may also be providedso that the attenuation circuit can be arranged as a Tee or Pi typeattenuator if desired. Each attenuation circuit segment in theattenuation circuit includes a plurality of stacked transistors. Theplurality of stacked transistors in each attenuation segment is coupledto attenuate an input signal. The plurality of stacked transistors maybe set by a control circuit to a constant impedance level that providesattenuation at a desired value. In the alternative, the plurality ofstacked transistors may be configured by the control circuit to provideeach attenuation circuit segment with a variable impedance level havinga continuous impedance range. By having a plurality of stackedtransistors in each attenuation circuit segment, the signal beingattenuated by the attenuation circuit is distributed among each of thetransistors in the stack. As a result, the stack of transistors in eachattenuation circuit segment can reduce distortion and preservebandwidth.

A control circuit may be operably associated with each of the pluralityof stacked transistors to set the impedance level of each of theattenuation circuit segments. This control circuit may be adapted toreceive an attenuation control signal having a signal level related to adesired impedance level of the attenuation circuit. A temperaturecompensation circuit is provided in the attenuator that can detect achange in an operating temperature associated with the attenuationcircuit. The temperature compensation circuit generates an attenuationcontrol adjustment signal that adjusts the signal level of theattenuation control signal in accordance to the change in the operatingtemperature. In this manner the temperature compensation circuit reducesor prevents changes in attenuation caused by a change in the operatingtemperature.

In yet another embodiment, a temperature controlled attenuator includesan attenuation circuit having a first series connected attenuationcircuit segment and a first shunt connected attenuation circuit segment.As in the variable attenuator described above, additional seriesconnected and/or shunt connected attenuation circuit segments may alsobe provided so that the attenuation circuit can be arranged as a Tee orPi type attenuator if desired. Each attenuation circuit segment in theattenuation circuit includes a plurality of stacked transistors. Theplurality of stacked transistors in each attenuation segment is coupledto attenuate an input signal. The plurality of stacked transistors maybe set by a control circuit to an impedance level that varies as afunction of temperature to provide a desired attenuation characteristic.In the alternative, the plurality of stacked transistors may beconfigured to provide each attenuation circuit segment with a variableimpedance level having a continuous impedance range. A control circuitadjusts a variable impedance levels in accordance with an attenuationcontrol signal to adjust the variable attenuation level. The attenuationcontrol signal operates at a quiescent operating point and is adjustedfrom the quiescent operating point by a temperature coefficient and thusthe attenuation is temperature controlled. By having a plurality ofstacked transistors in each attenuation circuit segment, the signalbeing attenuated by the attenuation circuit is distributed among each ofthe transistors in the stack. As a result, the stack of transistors ineach attenuation circuit segment can reduce distortion.

Those skilled in the art will appreciate the scope of the presentdisclosure and realize additional aspects thereof after reading thefollowing detailed description of the preferred embodiments inassociation with the accompanying drawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

The accompanying drawing figures incorporated in and forming a part ofthis specification illustrate several aspects of the disclosure, andtogether with the description serve to explain the principles of thedisclosure.

FIG. 1 illustrates one embodiment of a variable attenuator in accordancewith the present disclosure;

FIG. 2 illustrates one embodiment of a stack of transistors formed on asilicon-on-insulator type substrate;

FIG. 2A illustrate a conceptualized illustration of the stack oftransistors in FIG. 1;

FIG. 3 illustrates one embodiment of a variable attenuator in accordancewith the present disclosure that has an attenuation circuit in a classicTee-type configuration;

FIG. 4 is a graph illustrating a total attenuation level versusfrequency of one embodiment of an attenuation illustrated in FIG. 3, atdifferent control voltage levels;

FIG. 5 is a graph illustrating the third order intercept point, IIP3,versus the total attenuation level of one embodiment of an attenuationcircuit illustrated in FIG. 3;

FIG. 6 illustrates one embodiment of a variable attenuator that has anattenuation circuit in a balanced Tee-type configuration;

FIG. 7 illustrates one embodiment of a variable attenuator having anattenuation circuit in a bridged Tee-type configuration;

FIG. 7A illustrates a conceptualized illustration of the embodiment of areference attenuator and feedback;

FIG. 8 is a circuit diagram of one embodiment of a variable attenuatorhaving an attenuation circuit in a Tee-type configuration;

FIG. 9 is a circuit diagram of another embodiment of a variableattenuator having an attenuation circuit in a Tee-type configuration;

FIG. 10 is a circuit diagram of yet another embodiment of a variableattenuator having an attenuation circuit in a Tee-type configuration;

FIG. 11 is a circuit diagram of still yet another embodiment of avariable attenuator having an attenuation circuit in a Tee-typeconfiguration;

FIG. 12 is a circuit diagram of yet another additional embodiment of avariable attenuator having an attenuation circuit in a Tee-typeconfiguration;

FIG. 13 illustrates one embodiment of a variable attenuator inaccordance with the present disclosure that has an attenuation circuitin a classic Pi-type configuration;

FIG. 14 is a graph illustrating a attenuation level versus frequency ofone embodiment of an attenuator illustrated in FIG. 13, at differentcontrol voltage levels;

FIG. 15 illustrates one embodiment of a variable attenuator that has anattenuation circuit in a balanced Pi-type configuration;

FIG. 16 illustrates one embodiment of a variable attenuator that has anattenuator having an attenuation circuit in a bridged Pi-typeconfiguration;

FIG. 17 is a circuit diagram of one embodiment of a variable attenuatorhaving an attenuation circuit in a Pi-type configuration;

FIG. 18 is a circuit diagram of another embodiment of a variableattenuator having an attenuation circuit in a Pi-type configuration;

FIG. 19 is a circuit diagram of an additional embodiment of a variableattenuator having an attenuation circuit in a bridged Pi-typeconfiguration;

FIG. 20 illustrates an embodiment of a variable attenuator in accordancewith the present disclosure having a cascaded first and secondattenuation circuits wherein each attenuation circuit is in a Tee-typeconfiguration;

FIG. 21 is illustrates an embodiment of a variable attenuator inaccordance with this disclosure having a cascaded first and secondattenuation circuits wherein the first attenuation circuit is in aTee-type configuration and the second attenuation circuit is in aPi-type configuration;

FIG. 22 is a circuit diagram of an embodiment of a variable attenuatorin accordance with FIG. 21 having cascaded first and second attenuationcircuits wherein the first attenuation circuit is in a Tee-typeconfiguration and the second attenuation circuit is in a Pi-typeconfiguration;

FIG. 23 illustrates a total attenuation level of the cascaded first andsecond attenuation circuits versus the control voltage level of thevariable attenuator described in FIG. 22;

FIG. 24 is a graph illustrating the total attenuation level versusfrequency of the variable attenuator described in FIG. 22, at differentcontrol voltage levels;

FIG. 25 illustrates a circuit diagram of one embodiment of a temperaturecompensation attenuator having an attenuation circuit in a Tee-typeconfiguration;

FIG. 26 illustrates a circuit diagram of one embodiment of a temperaturecompensation attenuator having an attenuation circuit in a Pi-typeconfiguration;

FIG. 27 illustrates one embodiment of a temperature compensationattenuator having cascaded first and second attenuation circuitsegments, the first attenuation circuit segment being in a Tee-typeconfiguration and the second attenuation circuit segment being in aPi-type configuration;

FIG. 28 illustrates another embodiment of a temperature compensationattenuator having cascaded first and second attenuation circuitsegments, the first attenuation circuit segment being in a Tee-typeconfiguration and the second attenuation circuit segment being in aPi-type configuration;

FIG. 29 illustrates a first temperature compensation circuit for thetemperature compensation attenuator in FIG. 28;

FIG. 30 illustrates a second temperature compensation circuit for thetemperature compensation attenuator in FIG. 28;

FIG. 31 illustrates a third temperature compensation circuit for thetemperature compensation attenuator in FIG. 28;

FIG. 32 illustrates a fourth temperature compensation circuit for thetemperature compensation attenuator in FIG. 28;

FIG. 33 illustrates the change in the total attenuation level of thecascaded first and second attenuation circuit segments as a function ofthe control voltage level for the temperature compensation attenuator inFIG. 28;

FIG. 34 illustrates the third order intercept point of the cascadedfirst and second attenuation circuit segments as a function of the totalattenuation level for the temperature compensation attenuator in FIG.28;

FIG. 35 illustrates one embodiment of an attenuator built on a quad noleads package;

FIG. 36 illustrates one embodiment of an attenuation circuit in aTee-type configuration built on a quad no leads package; and

FIG. 37 illustrates one embodiment of an attenuation circuit in aPi-type configuration build ton a quad no leads package.

FIG. 38 illustrates a circuit diagram of one embodiment of a temperaturecontrolled attenuator in a Tee-type configuration.

FIG. 39 illustrates one embodiment of one embodiment of a temperaturecontrolled attenuator in a Pi-type configuration.

DETAILED DESCRIPTION

The embodiments set forth below represent the necessary information toenable those skilled in the art to practice the embodiments andillustrate the best mode of practicing the embodiments. Upon reading thefollowing description in light of the accompanying drawing figures,those skilled in the art will understand the concepts of the disclosureand will recognize applications of these concepts not particularlyaddressed herein. It should be understood that these concepts andapplications fall within the scope of the disclosure and theaccompanying claims.

The present disclosure relates generally to variable attenuators andmethods of operating the same. More particularly, the disclosuredescribes variable attenuators that have dynamic attenuation rangesand/or high bandwidth and low distortion. FIG. 1 illustrates a variableattenuator 10 having an attenuation circuit 12 and a control circuit 14.The attenuation circuit 12 attenuates an input signal 15 received fromthe input terminal 16 and delivers an attenuated output signal 18 to theoutput terminal 20. The attenuator 10 may be utilized in any typecircuit requiring attenuation, such as radio frequency (RF) circuits,signal processing circuits, and circuits utilized for measurement.

The attenuation circuit 12 of this embodiment is one type of attenuationcircuit and is often referred to as an L-type attenuation circuit 12.The attenuation circuit 12 includes a series connected attenuationcircuit segment 22 and a shunt connected attenuation circuit segment 24.As shall be explained in further detail below, additional seriesconnected and shunt connected attenuation circuit segments may beprovided to define more complex attenuation circuits. The seriesconnected attenuation circuit segment 22 and the shunt connectedattenuation circuit segment 24 each include a plurality of stackedtransistors. The plurality of stacked transistors in the seriesconnected attenuation circuit segment 22 are coupled to provide thefirst series connected attenuation circuit segment with a first variableimpedance level having a first continuous impedance range. Thus, theplurality of stacked transistors in series connected attenuation circuitsegment 22 provide attenuation to the input signal 15 and the firstvariable impedance level may be varied within the first continuousimpedance range by controlling the plurality of stacked transistorsbetween a minimum impedance value to a maximum impedance value.

The stacked transistors may be the only components in the seriesconnected attenuation circuit segment 22 that provide attenuation to theinput signal 15. In this embodiment, the first plurality of stackedtransistors are coupled to provide the first variable impedance levelwithin the first continuous impedance range because the impedance levelof the plurality of stacked transistors which can be varied along acontinuous impedance range of the plurality of stacked transistors. Inthis case, the first impedance level of the series connected attenuationcircuit segment may be equal to the impedance level of the plurality ofstacked transistors. However, as shall be explained in further detailbelow, other passive or active components may be coupled to theplurality of stacked transistors and also provide an impedance to theinput signal 15. Still, the plurality of stacked transistors provide thefirst variable impedance level of the series connected attenuationcircuit segment 22 because the plurality of stacked transistors arecoupled to present a variable impedance to the input signal 15.Consequently, by providing the variable impedance level of the pluralityof stacked transistors one also provides the first variable impedancelevel of the series connected attenuation circuit segment 22. This is soeven though the first variable impedance level of the series connectedattenuation circuit segment 22 and the variable impedance level of theplurality of stacked transistors may not be equal.

The same may be true for the plurality of stacked transistors in theshunt connected attenuation circuit segment 24. The plurality of stackedtransistors in the shunt connected attenuation circuit segment 24 arecoupled to provide the shunt connected attenuation circuit segment 24with a second variable impedance level having a second continuousimpedance range. As explained above, the plurality of stackedtransistors in the shunt connected attenuation circuit segment 24 may bethe only components providing attenuation or there may be additionalcomponents providing attenuation. In either case, the plurality ofstacked transistors are coupled to attenuate the input signal 15 andthus provide the shunt connected attenuation circuit segment 24 with thesecond variable impedance level having the second continuous impedancerange. Thus, the plurality of stacked transistors in the shunt connectedattenuation circuit segment 24 provide attenuation to the input signal15 and the second variable impedance level may be varied within thesecond continuous impedance range by controlling the plurality ofstacked transistors.

Note that the first continuous impedance range of the series connectedattenuation circuit segment 22 may be the same or different than thesecond continuous impedance range of the shunt connected attenuationcircuit segment 24. This depends on the particular characteristicsrequired or desired for the attenuation circuit 12. Also, theattenuation circuit 12 has a variable attenuation level that is providedas a function of the first variable impedance level and the secondvariable impedance level of each of the attenuation circuit segments 22,24. Thus, the variable attenuation level can be said to be based on thefirst variable impedance level and the second variable impedance level.

To control the first variable impedance level and the second variableimpedance level, the attenuator 10 includes a control circuit 14 thatmay be adapted to receive an attenuation control signal 26 from acontrol signal source 28. In this embodiment, the attenuation controlsignal 26 is a control voltage, V_control, has a variable voltage level,which can be varied between a control voltage minimum and a controlvoltage maximum. The control signal source 28 may be a variable DCvoltage source. The voltage level of the variable DC voltage source maybe programmed by other components (not shown) or in the alternative bemanually controlled by a user. In this example, the control voltage,V_control, may vary between 0-5V.

The control circuit 14 is operably associated with the plurality ofstacked transistors in the series connected attenuation circuit segment22 and also in the shunt connected attenuation circuit segment 24. Bycontrolling the operation of plurality of stacked transistors in each ofthe attenuation circuit segments 22, 24 the control circuit 14 cancontrol the first variable impedance level and second variable impedancelevel to determine the variable impedance level of the attenuator 10 andset the input and output terminals 16, 20 of the structure to thedesired impedance. The control circuit 14 may control the plurality ofstacked transistors in each of the attenuation circuit segments 22, 24based on the voltage level of the control voltage, V_control.Accordingly, the first variable impedance level and the second variableimpedance level are related or are associated with the voltage level ofthe control voltage, V_control.

In this embodiment, the control circuit 14 is operable to generate aseries segment control signal 30 and a shunt segment control signal 32based on the control voltage, V_control. The control circuit 14 may havea transfer function that determines a signal level of the series segmentcontrol signal 30 and a signal level of the shunt have a signal level inaccordance with the voltage level of the control voltage, V_control.Accordingly, as the voltage level of the control voltage, V_control isvaried so are the signal levels of the series segment control signal 30and shunt segment control signal 32. The series segment control signal30 may be utilized to determine the operation of the plurality ofstacked transistors in the series connected attenuation circuit segment22 and control the first variable impedance level. Similarly, the shuntsegment control signal 32 may be utilized to determine the operation ofthe plurality of stacked transistors in the shunt connected attenuationcircuit segment 24 and control the second variable impedance level.Varying the signal level of the series segment control signal 30 andshunt segment control signal 32 thus varies the first variable impedancelevel and the second variable impedance level to adjust the variableattenuation level of the attenuation circuit 12.

The control circuit 14 may be configured in any manner such that thetransfer function generates the appropriate signal levels for the seriessegment control signal 30 and shunt segment control signal 32. Forexample, the control circuit 14 may utilize preconditioning circuit(s)utilizing open-loop techniques, like ad hoc approximation circuitry, orsquaring circuitry, so that each of the signal levels of the seriessegment control signal 30 and shunt segment control signal 32 have adesired relationship to the voltage level of the control voltage,V_control.

Next, FIG. 2 illustrate a plurality of stacked transistors 34 formed ona common substrate 36. The plurality of stacked transistors 34 in thisdisclosure may be any type of transistor such as complementarymetal-oxide-semiconductor field effect transistors (CMOS), a metalsemiconductor field effect transistors (MESFETs), and a high electronmobility transistor field effect transistors (HFETs) and the like. Inthe illustrated embodiment, each of the plurality of stacked transistors34 is a field effect transistor (FET). Thus each of the stackedtransistors 34 includes a gate 38, a source 40, and a drain 42 formedwithin the substrate 36 and conductive terminals 44, 46, 48 coupled tothe gate 38, the drain 42, and the source 40, respectively. When avoltage is applied to the gate 38, a channel 43 is provided that permitscurrent to flow between the source 38 and drain 42. In the illustratedembodiment, each of the sources 40 and drains 42 are independentlyformed for each of the stacked transistors 34 but, in other embodiments,the sources 40 and drains 42 between one of the stacked transistors 34and another one of the stacked transistors 34 may be merged to form astructure having a plurality of merged stacked transistors.

The drain 42 and the source 40 may be doped regions of the substrate 36as is known in the art. In the illustrated example, the stackedtransistors 34 may be formed on a complementarymetal-oxide-semiconductor (CMOS) type transistor, such as MOSFETs. Asmentioned above, the stacked transistors 34 may also be other types oftransistors 34 such as MESFETs and HFETs. The substrate 36 may be asilicon-on-insulator (SOI) type substrate or a silicon-on-sapphire (SOS)type substrate, or a Gallium Arsenide (GaAs) type substrate.

In the illustrated embodiment, the substrate 36 is asilicon-on-insulator type substrate having a device layer 51 made ofsilicon (Si) that forms the plurality of stacked transistors 34. Beneaththe device layer 51, the silicon-on-insulator type substrate may includean insulating layer 52 (also known as a Buried Oxide layer “BOX”) and ahandle layer 54. The insulating layer 52 is typically made from aninsulating or dielectric type oxide material such as SiO2 while thehandle layer 54 is typically made from a semiconductor, such as silicon(Si). As illustrated, the device layer 51 may include the dopedtransistor layers that form the channel 43, the drain 42, and the source40. The stacked transistors 34 also have transistor bodies 56, which mayinclude a body contact 57 for providing a bias voltage to the body 56.

The degradation in bandwidth normally associated with the increasedparasitic capacitances of the extra components and their increased sizeis mitigated by implementing the attenuator on a technology that has lowparasitic capacitances to substrate such as SOI or SOS and through othertechniques provided in this disclosure that suppress the loading effectsof other capacitances. These parasitic capacitances may be representedas the gate to source capacitance, C_(gs), gate to drain capacitances,C_(gd), and body to handle layer capacitances, C_(bh), in FIG. 2. Forexample, one of the advantages to SOI and SOS designs are their low bodyto handle layer parasitic capacitances, such as C_(bh). In the case ofSOI the low parasitic is because of the presence of the insulating layer52. The effective parasitic can be further improved through the use of ahigh resistivity substrate (such as, 1 kohm-cm or more). The highresistivity of the handle layer 54 is modeled by impedance 55. In thecase of SOS, the low parasitic is due to the use of the sapphire as thehandle layer. The low parasitic capacitance allows for high degrees oftransistor stacking and large transistors to be used withoutcompromising the overall attenuator's frequency bandwidth. The activedevice used to implement the stacked FET structures can be either PFETor NFET devices. Other parasitic capacitances may be modeled between theas the source to body capacitances, C_(sb), and drain to bodycapacitances, C_(db).

To increase linearization, high value resistances Rg and/or Rb may beprovided by resistive and biasing circuits (with single and or multipleresistor topologies) coupled to the stacked transistors 34. Rg is theresistance presented to the gate 38 while Rb is the resistance presentedto a body contact Rb. When the stacked transistors 34 are utilized toattenuate RF signals, these resistors Rg and/or Rb may improvelinearization by assuring that the gate 38 to body voltages aremaintained at or near the average of the source 40 to drain 42 RFvoltages. To do this, the high pass filter pole to the gate 38 and body56 created by Rg and C_(gs)/C_(gd) and Rb and C_(sb)/C_(db) should besignificantly lower than the target operating frequency. It is difficultto write a universal equation for the values of Rg and Rb because theirvalues are dependent on the topology of resistive and biasing networkemployed. These may however be determined once a topology for theresistive and biasing network is selected.

The device layer may be between 50 nm to 100 nm thick for a fullydepleted SOI process, between 100 nm and 150 nm for a partially depletedSOI process and much greater than 200 nm for a thick film process. Thehandle layer 54 is generally around 150-750 microns in thickness. In oneembodiment, the handle layer 54 has impedance 55 with a resistivity ofaround 1 kohm-cm. Other layers may be included in, between, or below thedevice layer 51, the insulating layer 52, and the handle layer 54. Asshall be explained in further detail below, the body contact 57 of eachof the transistors bodies 56 may be externally biased through a biasingcircuit. In these design the transistor bodies 56 may be biased toground though other bias potentials are possible. In the alternative andalso explained in further detail below, the transistor bodies 56 of theplurality of stacked transistors may be left floating, where there is noexternal body connection and no external bias is applied to the body 56.If transistor bodies 56 are left floating, leakage currents across thedrain-body and source-body reverse biased diodes may define a voltage onthe transistor body and achieve similar results (i.e., high bandwidthand low distortion). It is also possible to make stacked structures oftransistors with a combination of floating and biased transistor bodies56.

In the illustrated embodiment, the plurality of stacked transistors 34are stacked coupling the terminal 46 for the drain 42 and the terminal48 for the source 40 in series. As discussed above, the plurality ofstacked transistors 34 may be utilized in the attenuation circuitsegments of an attenuation circuit to provide the attenuation circuitsegments with a variable impedance levels that are adjustable within acontinuous impedance range. This may dramatically increase the bandwidthof the attenuator by reducing distortion.

FIG. 2A illustrates a conceptualized drawing of the plurality of stackedtransistors 34. The unexpected performance of the plurality of stackedtransistors 34 will be compared to the performance of a singletransistor in an attenuator. If a single transistor were utilized in theattenuation circuit segments, the real impedance of the transistor maybe expressed as a resistance, R_(on). To get the same real impedance,R_(on) from the plurality of stacked transistors 34, the width of eachof the stacked transistors 34 may be increased by a factor of N, where Nis the number of stacked transistors 34 in the plurality of stackedtransistors 34. An estimation of the distortion current, i_(distortion)(t), for the single transistor can be estimated in terms of a powerseries as:i _(distortion)(t)=p ₁ V _(sig)(t)+p2V _(sig)(t)² +p ₃ V _(sig)(t)³ . .. +p _(x) V _(sig)(t)^(x)

Where V_(sig)(t) is the input signal voltage and p_(x) are a function ofthe voltage at the gate terminal and the source and load impedances. Thedistortion current, i_(distortion) (t), can be rewritten in terms of thevoltage drop ΔV_(sigN)(t) across the entire plurality of stackedtransistors if the parasitic capacitances of to the handle wafer 54 arelow and the gate resistance high relative to the characteristicimpedance level of the plurality of stacked transistors 34. In thisembodiment, the plurality of stacked transistors 34 may be considered atwo-port network at the frequencies of the input signal, which for thepurposes of this example are RF frequencies. By increasing the width ofthe plurality of stacked transistors 34 such that they provide the sameR_(on) as the single transistor, the input signal voltage, the pluralityof stacked transistors 34 can provide a similar impedance yet distributethe input voltage signal, V_(sig)(t) across each of the plurality ofstacked transistors 34. The distortion current, i_(distortion)(t), maybe estimated by harmonics derived from a Taylor series expansion andconceptually illustrated in FIG. 2A.

For one of the plurality of stacked transistors, the Taylor seriesexpansion may be expressed as:idistortion(t)=q ₁ ΔV _(sigN)(t)+q ₂ ΔV _(sigN)(t)² +q ₃ ΔV _(sigN)(t)³. . . +q _(x) ΔV _(sigN)(t)^(x)ΔV _(sigN)(t)=V _(in)(t)−V _(out)(t)V _(in)(t)=a ₁ V _(sig)(t)+a ₂ V _(sig)(t)² +a ₃ V _(sig)(t)³ + . . . a_(x) V _(sig)(t)^(x)V _(out)(t)=b ₁ V _(sig)(t)+b ₂ V _(sig)(t)² +b ₃ V _(sig)(t)³ . . . +b_(x) V _(sig)(t)^(x)

Where parameters q_(x), a_(x), b_(x) are functions of the voltage at thegate terminals and the source and load impedances derived from a Taylorexpansion series. However, it should be noted that this approximationmay not be true in for all types of substrates 36, such as a triple wellbulk CMOS implementations.

In this embodiment, the distortion is a function of the voltage dropΔV_(sig)(t) and not any particular common mode voltage. Since the widthof each of the plurality of stacked transistors 34 was scaled so thatthe plurality of stacked transistors 34 have the same real impedance,Ron, as the single transistor, the plurality of stacked transistors 34have the same small signal attenuation characteristic as the singletransistor and the ΔV_(sig)(t) but evenly distributed across each of theplurality of stacked transistors 34. The parameters qx are the same forthe single transistor as for each individual transistor in the pluralityof stacked transistors 34 but the voltage drop across each individualtransistor of the plurality of stacked transistors 34 can be expressedas:ΔV _(sigN)(t)=ΔV _(sig)(t)/N

Applying this formula to the estimation for idistortion (t) of theplurality of stacked transistors 34 we get:i _(distortion)(t)=N*[q ₁(ΔV _(sig)(t)/N)+q ₂(ΔV _(sig)(t)/N)² +q ₃(ΔV_(sig)(t)/N)³ . . . +q _(x)(ΔV _(sig)(t)/N)^(x)]

As can be seen from the above equations, a factor of N distortion may beintroduced into the distortion current i_(distortion)(t) by theplurality of stacked transistors 34. However, this is more thancompensated for by the (1/N)^(x) reduction in distortion. From thisequation, the intermodulation distortion number, IIM3, of the pluralityof stacked transistors 34 can be estimated to be:IIM3 dB=40*log₁₀ [(p1/p3)*(ΔV _(sig)(t)/N)]

The improvement in the third-order intercept point, IIP3, due tostacking can be estimated to be:IIP3_(N) /IIP3_(single)=20*log₁₀ N

The plurality of stacked transistors 34 thus provides the same realimpedance level Ron as the single transistor but distributes the inputsignal among the plurality of stacked transistors 34 which may providean estimated 20*log₁₀N improvement in IIP3. For example, if there aretwenty-four (24) stacked transistors 34 the improvement in IIP3 isalmost twenty-eight (28) dB. However, prior to the discovery of thetechniques disclosed in this disclosure, the degradation in bandwidthnormally associated with the increased parasitic capacitances of theextra components and their increased size prevented the use ofattenuators utilizing a plurality of stacked transistors 34 inattenuation circuit segments. The unexpected result resulting from thetechniques described herein is that the effect of these parasiticcapacitances can be mitigated by implementing the attenuator on asubstrate that has low parasitic capacitances and/or by rendering theseparasitic capacitances negligible through the use of resistive circuits,biasing circuits, and other techniques described in this disclosure.Also unexpected are the large number of transistors that may be stackedutilizing the techniques described herein while also maintaining lowdistortion and high bandwidth characteristics of the attenuator. Designshave been tested that provide stacks of over forty (40) transistors inan attenuation circuit segment. Furthermore, utilizing the plurality ofstacked transistors 34 in the attenuation circuit segments is relativelycheap in comparison to pin diode and quadrature hybrid solutions andpreserves the bandwidth of the attenuation circuit configuration.

Note that in determining the above equations it was assumed that all ofthe plurality of stacked transistors 34 were of the same type and width.Also, it was assumed that each of the plurality of stacked transistors34 would have the same gate to source voltages, V_(gs) and gate to drainvoltages, V_(gd) as operating points. This was done to simplify both theequations and the explanation. However, these conditions may but are notnecessarily the case and there is no requirement that the plurality ofstacked transistors 34 all be either the same type of transistor, havethe same width, and/or have the same gate to source voltages asoperating points.

FIG. 3 illustrates another embodiment of an attenuator 58 having anattenuation circuit 60 and a control circuit 62. The attenuation circuit60 has a variable attenuation level having a total continuousattenuation range. The variable attenuation level of the attenuationcircuit 60 is controlled by the control circuit 62. The control circuit62 receives an attenuation control signal 68 which in this example is acontrol voltage, V_control. The control voltage, V_control, may be a DCvoltage which can be varied to have any voltage level within acontinuous voltage range. In this embodiment, the voltage range ofcontrol voltage, V_control, is anywhere between 0-5V. The controlcircuit 62 is operably associated with the attenuation circuit 60 tocontrol the variable attenuation level based on the voltage level of thecontrol voltage, V_control. Thus, the variable attenuation level of theattenuation circuit 60 is varied as the voltage level of the controlvoltage, V_control, is varied through the continuous voltage range. Ifdesirable, the transfer function of the control circuit 62 allows thecontrol circuit 62 to span the entire total continuous attenuation rangeof the attenuation circuit 60. Thus, the variable attenuation level maybe set to any attenuation level within the total continuous attenuationrange by the control circuit 62.

In this embodiment, the attenuation circuit 60 has an input terminal 64for receiving an input signal 66. The attenuation circuit 60 attenuatesthe input signal 66 in accordance with the variable attenuation level toproduce an attenuated output signal 68 that is output from an outputterminal 69. To attenuate the input signal 66, the attenuation circuit60 includes a first series connected attenuation circuit segment 70, asecond series connected attenuation circuit segment 72, and a shuntconnected attenuation circuit segment 74. The attenuation circuitsegments 70, 72, 74 are configured so that the attenuation circuit 60 isarranged in a Tee-type configuration, which in this embodiment is aclassic Tee-type configuration. Also, the first series connectedattenuation circuit segment 70 is coupled in series between the inputterminal 64 and an internal node 76 and the second series connectedattenuation circuit segment 72 is coupled in series between the internalnode 76 and the output terminal 69. The shunt connected attenuationcircuit segment 74 has a shunt connection to the internal node 76 and isconnected between the internal node 76 and another terminal 77.

Each of the attenuation circuit segments 70, 72, 74 has a plurality ofstacked transistors. The plurality of stacked transistors in each of theattenuation circuit segments 70, 72, 74 may be formed on a commonsubstrate, or the plurality of stacked transistors in each or some ofthe attenuation circuit segments 70, 72, 74 may be formed on separatesubstrates. Similarly, if the electronic components of the controlcircuit 62 require a substrate, the control circuit 62 may be alsoformed on a common substrate having one or more of the plurality ofstacked transistors from the attenuation circuit segments 70, 72, 74, oron a separate substrate.

The plurality of stacked transistors in the first series connectedattenuation circuit segment 70 are coupled to provide the first seriesconnected attenuation circuit segment 70 with a first variable impedancelevel having a first continuous impedance range. Thus, the plurality ofstacked transistors in the first series connected attenuation circuitsegment 70 may attenuate the input signal 66 and thus provide the firstvariable impedance level of the first series connected attenuationcircuit segment 70. Similarly, the plurality of stacked transistors inthe second series connected attenuation circuit segment 72 are coupledto provide the second series connected attenuation circuit segment 72with a second variable impedance level having a second continuousimpedance range. Thus, the plurality of stacked transistors in thesecond series connected attenuation circuit segment 72 may attenuate theinput signal 66. Finally, the plurality of stacked transistors in theshunt connected attenuation circuit segment 74 are coupled to providethe shunt connected attenuation circuit segment 74 with a third variableimpedance level having a third continuous impedance range. Thus, theplurality of stacked transistors in the shunt connected attenuationcircuit segment 74 may attenuate the input signal 66 in accordance withthe third variable impedance level.

The variable attenuation level of the Tee-type configuration in theattenuation circuit 60 is a function of the first variable impedancelevel, the second variable impedance level, and the third variableimpedance level (as well as other parameters such as the input impedanceat the input terminal 64 and the output impedance at the output terminal69), and thus the variable attenuation level may be said to be based onfirst variable impedance level, the second variable impedance level, andthe third variable impedance level. Similarly, the continuousattenuation range of the attenuation circuit 60 may be related to thefirst continuous impedance range, the second continuous impedance range,and the third continuous impedance range. The control circuit 62 variesthe variable attenuation level within the continuous attenuation rangein accordance with the voltage level of the control voltage, V_control.

The control circuit 62 adjust the variable attenuation level by beingoperably associated with the plurality of stacked transistors in each ofthe attenuation circuit segments 70, 72, 74 and controlling the firstvariable impedance level, the second variable impedance level, and thethird variable impedance level based on the voltage level of the controlvoltage, V_control, from a control voltage source 78. In the illustratedembodiment, the control circuit 62 is adapted to receive the controlvoltage, V_control, and generate a series segment control signal 80 anda shunt segment control signal 82 having signal levels that are based onthe voltage level of the control voltage, V_control. The shunt segmentcontrol signal 82 controls the third variable impedance level bycontrolling the plurality of stacked transistors in the shunt connectedattenuation circuit segment 74.

In this embodiment, the series segment control signal 80 controls thefirst variable impedance level and the second variable impedance levelby controlling the plurality of stacked transistors in both of the firstand second series connected attenuation circuit segments 70, 72. Thismay be advantageous if the first and second series connected attenuationcircuit segments 70, 72 are the same and the first and second variableimpedance levels are to have the same value. Also, if the first andsecond series connected attenuation circuit segments 70, 72 aredifferent or if the first and second variable impedance levels are to beset to different values, electronic components may be provided withinthe first series connected attenuation circuit segment 70 and the secondseries connected attenuation circuit segment 72 so that each of thefirst and second series connected attenuation circuit segments 70, 72may be operated by the same series segment control signal 80. As shallbe discussed in further detail below, in other embodiments, the controlcircuit 62 may generate a series segment control signal 80 for each ofthe first and second series connected attenuation circuit segments 70,72. The signal level of the shunt segment control signal 82 controls thethird variable impedance level of the shunt connected attenuationcircuit segment 74.

A transfer function of the control circuit 62 generates the seriessegment control signal 80 and shunt segment control signal 82 to controlthe first variable impedance level, the second variable impedance level,and the third variable impedance level to set them at a desiredimpedance level. Since the variable attenuation level is a function,this may set the variable attenuation level of the attenuation circuit60 to a desired attenuation level. For example, if the control circuit62 utilizes ad-hoc linear circuits, the control circuit 62 may includedifferential paths having the right amount of gain and switching timesso that the first variable impedance level, the second variableimpedance level, and the third variable impedance level have a desiredrelationship with the voltage level of the control voltage, V_control.In this manner, the setting the voltage level of the control voltagesets the variable attenuation level to a desired value within the totalcontinuous control range of the attenuation circuit 60. Other techniquesfor designing the desired control circuit 62 may be utilized as well.The design and transfer function of the control circuit 62 may bedetermined through, for example, circuit calculations, circuitsimulations, and/or empirical circuit design techniques.

The attenuator 58 in FIG. 3 and the other embodiments of attenuatorsdescribed throughout this disclosure may be utilized in many differenttypes of circuits. For example, the attenuator 58 may be utilized in thefront end of a radio frequency (RF) transceiver (not shown) in which theinput terminal 64 is coupled to an antenna (not shown) and the outputterminal 69 is coupled to signal processing circuitry (not shown) of theRF transceiver. The terminal 77 may be connected to an external nodesuch as, for example, a ground node. One of the advantages ofattenuation circuit 60 being arranged in the Tee-type configuration isthat the attenuation circuit 60 may be utilized to substantially matchthe impedance at both the input terminal 64 and the output terminal 69.The transfer function of the control circuit 62 may be configured to dothis. Also, the attenuation circuit 60 may actually operate to adjustthe input impedance and the output impedance at terminals 64, 69, so asto force matching.

When the RF transceiver is operating as a RF receiver, the input signal66, which in this case is an RF signal received from the antenna, may beprovided at the input terminal 64 for attenuation. The input signal 66would be attenuated to generate the attenuated output signal 68 whichwould be received by the signal processing circuitry at the outputterminal 69. On the other hand, when the RF transceiver is operating asa transmitter, the input signal 66 would be received from the outputterminal 69. The attenuation circuit 60 generates the attenuated outputsignal 68 which is output from the input terminal 64 to the antenna. Thecontrol circuit 62 may control the first, second, and third impedancelevels so that the impedance of the attenuation circuit 60,substantially matches the impedance at the input terminal 64 and theoutput terminal 69.

Next, FIG. 4 is a graph demonstrating the performance of one embodimentof the attenuator 58 having the Tee-type attenuation circuit 60described in FIG. 3. In this case, the attenuation circuit segments 70,72, 74 each are provided with a stack of fourteen (14)metal-oxide-semiconductor field-effect transistors (MOSFETs) that formedon a silicon-on-insulator type substrate. The graph in FIG. 4illustrates the variable attenuation level of the attenuation circuit 60as a function of the frequency response. As illustrated, the variableattenuation level remains very consistent even as the frequency variesfrom 0-6 GHz. The continuous attenuation range of the variableattenuation level appears to have a somewhere around 0.9 dB and has amaximum value around 15-20 dB, depending on the frequency. The minimumvalue of the total continuous attenuation range may be set by the firstand second series connected attenuation circuit segments 70, 72 whilethe maximum value of the variable attenuation level may be set by theshunt connected attenuation circuit segment 74. There is somedegradation in the variable attenuation level particularly at higherfrequencies and when the variable attenuation level is set near itsminimum and maximum values. For example, the variable attenuation levelappears to have a capacitive slope near its minimum values. Thisindicates the presence of some parasitic capacitance. On the other hand,variable attenuation level indicates some parasitic inductance by theinductive slope near its maximum values. In all however, the attenuator58 preserves a large bandwidth. Furthermore, the degradation in thevariable attenuation level may be reduced or eliminated through circuitdesign.

FIG. 5 is a graph demonstrating the IIP3 of the same embodiment of theattenuator 58, as the variable attenuation level is varied across thespan of the continuous attenuation range. The first line 84 is the IIP3of the attenuator 58 as modeled by the Berkeley Short-channel IGFETmodel. The second line 86 is the IIP3 as simulated with the Penn StatePhillips model. The third line 88 is the measured IIP3. As demonstratedby FIG. 5, the IIP3 of the attenuator 58 is relatively high indicatingthat the attenuator 58 is highly linear throughout the total continuousattenuation range.

Referring now to FIG. 6, another embodiment of an attenuator 90 is shownhaving an attenuation circuit 92 and a control circuit 94. As in theembodiment above described in FIG. 3, the attenuation circuit 92 shownin FIG. 6 also includes a first series connected attenuation circuitsegment 96, a second series connected attenuation circuit segment 98,and a shunt connected attenuation circuit segment 100 and thus is in aTee-type configuration. However, in this attenuation circuit 92, theTee-type configuration also includes a first balancing attenuationcircuit segment 102 and a second balancing attenuation circuit segment104. Thus, this Tee-type configuration is sometimes referred to as abalanced Tee-type configuration or an H-type configuration. In thisembodiment each of the attenuation circuit segments 96, 98, 100, 102,104 include a plurality of stacked transistors.

In this embodiment, each of the attenuation circuit segments 96, 98,100, 102, 104 have a plurality of stacked transistors. It should benoted however that in alternative embodiments, the balancing attenuationcircuit segments 102, 104 may not each include a plurality of stackedtransistors but for example may have passive components. The pluralityof stacked transistors in the first series connected attenuation circuitsegment 96 are coupled to provide the first series connected attenuationcircuit segment 96 with a first variable impedance level having a firstcontinuous impedance range. Thus, the plurality of stacked transistorsin the first series connected attenuation circuit segment 96 mayattenuate an input signal 106 in accordance with the first variableimpedance level. Similarly, the plurality of stacked transistors in thesecond series connected attenuation circuit segment 98 are coupled toprovide the second series connected attenuation circuit segment 98 witha second variable impedance level that can be adjusted within a secondcontinuous impedance range. Thus, the plurality of stacked transistorsin the second series connected attenuation circuit segment 98 mayattenuate the input signal 106 in accordance with the second variableimpedance level.

Next, the plurality of stacked transistors in the shunt connectedattenuation circuit segment 100 are coupled to provide the shuntconnected attenuation circuit segment 100 with a third variableimpedance level having a third continuous impedance range. Thus, theplurality of stacked transistors in the shunt connected attenuationcircuit segment 100 may attenuate the input signal 106 in accordancewith the third variable impedance level. Also, the plurality of stackedtransistors in the first balancing attenuation circuit segment 102 arecoupled to provide the first balancing attenuation circuit segment 102with a fourth variable impedance level having a fourth continuousimpedance range. Thus, the plurality of stacked transistors in the firstbalancing attenuation circuit segment 102 may attenuate the input signal106 in accordance with the fourth variable impedance level. Finally, theplurality of stacked transistors in the second balancing attenuationcircuit segment 104 are coupled to provide the second balancingattenuation circuit segment 104 with a fifth variable impedance levelhaving a fifth continuous impedance range. Thus, the plurality ofstacked transistors in the second balancing attenuation circuit segment104 may attenuate the input signal 106 in accordance with the fifthvariable impedance level.

A variable attenuation level of the attenuation circuit 92 is a functionof the first, second, third, fourth and fifth variable impedance levels(as well as other parameters such as the impedances between IN+, IN− andOUT+ and OUT−) and is adjustable within a continuous attenuation range.Accordingly, the variable attenuation level may be said to be based onthe first, second, third, fourth and fifth variable impedance levels.

The control circuit 94 receives an attenuation control signal 108, inthis case a control voltage, V_control, and controls the attenuationcircuit segments 96, 98, 100, 102, 104 based on the voltage level of thecontrol voltage, V_control. In this embodiment, the control circuit 94generates a first and a second series segment control signals 110, 112to control the plurality of stacked transistors in each of first andsecond series connected attenuation circuit segments 96, 98. A shuntsegment control signal 114 is generated to control the plurality ofstacked transistors in the shunt connected attenuation circuit segment100. First and second balancing segment control signals 116, 118 aregenerated to control the plurality of stacked transistors in each of thebalancing attenuation circuit segments 102, 104. The segment controlsignals 110, 112, 114, 116, 118 all have a signal level based on thevoltage level of the control voltage, V_control and adjust the first,second, third, fourth and fifth variable impedance levels. The transferfunction of the control circuit 94 assures that the signals levels ofeach of the segment control signals 110, 112, 114, 116, 118 is at theappropriate signal level so that the variable attenuation level of theattenuation circuit 92 is at the desired attenuation level within thecontinuous attenuation range.

FIG. 7 illustrates yet another embodiment of an attenuator 120 having anattenuation circuit 122 and a control circuit 124. As in the embodimentabove described in FIG. 6, the attenuation circuit 122 shown in FIG. 7also includes a first series connected attenuation circuit segment 126,a second series connected attenuation circuit segment 128, and a shuntconnected attenuation circuit segment 130. The attenuation circuitsegments 126, 128, 130 are configured so that the attenuation circuit122 is also arranged in a Tee-type configuration. However, in thisattenuation circuit 122, the Tee-type configuration also includes abridge connected attenuation circuit segment 132. Thus, attenuationcircuit 122 may be referred to as being in a bridged Tee-typeconfiguration.

In this embodiment, each of the attenuation circuit segments 126, 128,130, 132 include a plurality of stacked transistors. Note however thatin alternative embodiments, the bridge connected attenuation circuitsegment 132 may not have a plurality of stacked transistors but forexample may have passive components. The plurality of stackedtransistors in the first series connected attenuation circuit segment126 are coupled to provide the first series connected attenuationcircuit segment 126 with a first variable impedance level having a firstcontinuous impedance range. Thus, the plurality of stacked transistorsin the first series connected attenuation circuit segment 126 mayattenuate an input signal 134 in accordance with the first variableimpedance level. Similarly, the plurality of stacked transistors in thesecond series connected attenuation circuit segment 128 are coupled toprovide the second series connected attenuation circuit segment 128 witha second variable impedance level having a second continuous impedancerange. Thus, the plurality of stacked transistors in the second seriesconnected attenuation circuit segment 128 may attenuate the input signal134 in accordance with the second variable impedance level.

Next, the plurality of stacked transistors in the shunt connectedattenuation circuit segment 130 are coupled to provide the shuntconnected attenuation circuit segment 130 with a third variableimpedance level having a third continuous impedance range. Thus, theplurality of stacked transistors in the shunt connected attenuationcircuit segment 130 may attenuate the input signal 134 in accordancewith the third variable impedance level. Finally, the plurality ofstacked transistors in the bridge connected attenuation circuit segment132 are coupled to provide the bridge connected attenuation circuitsegment 132 with a fourth variable impedance level having a fourthcontinuous impedance range. Thus, the plurality of stacked transistorsin the bridge connected attenuation circuit segment 132 may attenuatethe input signal 134 in accordance with the fourth variable impedancelevel.

In this embodiment, closed loop techniques are utilized to generate anattenuation control signal 136 which in this case is a control voltage,V_control. A reference attenuator 138 receives a control voltage,V_control_new to generate the control voltage, V_control. The controlcircuit 124 receives the control voltage, V_control and controls theattenuation circuit segments 126, 128, 130, 132 based on the voltagelevel of the control voltage, V_control. In this embodiment, the controlcircuit 124 generates a series segment control signal 142 to control theplurality of stacked transistors in each of first and second seriesconnected attenuation circuit segments 126, 128. A shunt segment controlsignal 144 is generated to control the plurality of stacked transistorsin the shunt connected attenuation circuit segment 130. A bridgingsegment control signal 146 may be generated to control the plurality ofstacked transistors in the bridge connected attenuation circuit segment132 and thus adjust the first, second, third, and fourth variableimpedance levels. The segment control signals 142, 144, 146 all have asignal level based on the voltage level of the control voltage,V_control.

Referring now to FIG. 7A, a more detailed illustration of one embodimentof the reference attenuator and feedback 138 is shown. The referenceattenuator and feedback includes a reference attenuation circuit 139that may be a scaled down version of the attenuation circuit 122. Thereference attenuation circuit 139 has a DC voltage applied to the inputand receives a feedback of the segment control signals 142, 144, 146.The output of the reference attenuation circuit 139 is applied to anerror amplifier 140. The error amplifier takes the difference betweenthe output of the reference attenuation circuit 139 and the controlvoltage, V_control_new and amplifies it. It may then be filtered by adominant pole filter for loop stability and generate the controlvoltage, V_control.

Referring now to FIG. 8, a circuit diagram of one embodiment of anattenuator 148 having an attenuation circuit 150 in a Tee-typeconfiguration and a control circuit 152 is shown. All of the componentsin the attenuator 148 may be formed on a common substrate provided by aMonolific Microwave Integrated Chip (MMIC) or some or all of thecomponents may be provided on separate substrates in the same MMIC ordifferent MMICs. The attenuation circuit 150 has an input terminal 154for receiving an input signal 156. The attenuation circuit 150attenuates the input signal 156 in accordance with the variableattenuation level set by the control circuit 152. This generates anattenuated output signal 158 that is output from an output terminal 160.To attenuate the input signal 156, the attenuation circuit 150 includesa first series connected attenuation circuit segment 162, a secondseries connected attenuation circuit segment 164, and a shunt connectedattenuation circuit segment 166. In this embodiment, the first seriesconnected attenuation circuit segment 162 is coupled in series betweenthe input terminal 154 and an internal node 168 and the second seriesconnected attenuation circuit segment 164 is coupled in series betweenthe internal node 168 and the output terminal 160. The shunt connectedattenuation circuit segment 166 has a shunt connection to the internalnode 168 and is connected between the internal node 168 and a groundnode 170.

The attenuation circuit segments 162, 164, 166 each have a plurality ofstacked transistors 172, 174, 176. The number and type of transistors ineach of the plurality of stacked transistors 172, 174, 176 may be thesame or vary depending on the desired attenuation characteristics of theattenuation circuit 150. In this embodiment, each of the transistors inthe plurality of stacked transistors 172, 174, 176 is a FET and thetransistors are stacked by coupling the source and drain terminals ofeach transistor in series. The first plurality of stacked transistors172 are coupled in the first series connected attenuation circuitsegment 162 to provide the first series connected attenuation circuitsegment 162 with a first variable impedance level having a firstcontinuous impedance range. In this embodiment, the first plurality ofstacked transistors 172 provide substantially all of the attenuation forthe first series connected attenuation circuit segment 162. Thus, thefirst variable impedance level of the first continuous impedance rangeis essentially equal to the variable impedance level having a continuousimpedance range of the first plurality of stacked transistors 172.Similarly, the second plurality of stacked transistors 174 are coupledto provide the second series connected attenuation circuit segment 164with a second variable impedance level having a second continuousimpedance range and the third plurality of stacked transistors 176 arecoupled to provide the shunt connected attenuation circuit segment 166with a third variable impedance level having a third continuousimpedance range. As with the first series connected attenuation circuitsegment 162, the second and third plurality of stacked transistors 174,176 provide substantially all of the attenuation in the second seriesconnected attenuation circuit segment 164 and in the shunt connectedattenuation circuit segment 166.

The control circuit 152 may be operably associated with the plurality ofstacked transistors 172, 174, 176 in each of the attenuation circuitsegments 162, 164, 166 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel based on a signal level of an attenuation control signal 178 andthereby adjust the variable attenuation level to a desired attenuationlevel within the continuous attenuation range. In this case, theattenuation control signal 178 may be the control voltage, V_control,having a continuous voltage range of 0-5V. The control circuit 152 maybe adapted to receive the control voltage, V_control, and generate aseries segment control signal 180 and a shunt segment control signal 182having signal levels that are based on the voltage level of the controlvoltage, V_control.

The gate terminals of the plurality of stacked transistors 172, 174, 176may be coupled to the control circuit 152 to receive the series segmentcontrol signal 180 and the shunt segment control signal 182. In thisembodiment, the series segment control signal 180 is a control voltage,Vcontrol_A, that is generated by the control circuit 152 based on thecontrol voltage, V_control, received by the control circuit 152 tocontrol the operation of the first and second plurality of stackedtransistors in the first and second series connected attenuation circuitsegments 162, 164. Similarly, the shunt segment control signal 182 is acontrol voltage, Vcontrol_B, that is generated by the control circuit152 based on the control voltage, V_control, to control the thirdplurality of stacked transistors 176 in the shunt segment attenuationcircuit segment. Consequently, the voltage levels of the controlvoltages, Vcontrol_A, Vcontrol_B, are set in accordance to the transferfunction of the control circuit 152 which provide the appropriate biasto the gate terminals of the plurality of stacked transistors 172, 174,176 and set the first variable impedance level, the second variableimpedance level, and the third variable impedance level. In this manner,the control circuit 152 is operably associated with each of theplurality of stacked transistors 172, 174, 176 to control the firstvariable impedance level, the second variable impedance level, and thethird variable impedance level based on the voltage level of the controlvoltage, V_control. In this manner, the variable attenuation level ofthe attenuation circuit 150 is set at the desired attenuation levelbased on the voltage level of the control voltage, V_control.

To reduce parasitic capacitances and preserve high bandwidth, each ofthe first, second, and third attenuation circuit segments 162, 164, 166include a first, second, and third resistive circuit 184, 186, 188,respectively. The resistive circuits 184, 186, 188 may each be coupledbetween the first, second, and third plurality of stacked transistors172, 174, 176 and the control circuit 152. The resistance of the firstresistive circuit 184 may be selected to be high relative to the firstcontinuous impedance range provided by the first series connectedattenuation circuit segment 162. If the resistance of the resistivecircuit 162 is high enough, the parasitic capacitances between thesource terminals and gate terminals, and the drain terminals and gateterminals become negligible within the first continuous impedance rangesince these parasitic capacitances are coupled to the high resistancesof the resistive circuit 184.

Generally, the resistive circuit 184 may provide a resistance at thegate terminals in the first plurality of stacked transistors 172 that isat least around 10 times greater than the inverse of the highest valueof the drain to source conductance of the first plurality of stackedtransistors 172. The control voltage, Vcontrol_A, may appear effectivelyas an open circuit voltage at the gate terminals of the first pluralityof stacked transistors 172 so that the gate terminals of the firstplurality of stacked transistors 172 do not load the first seriesconnected attenuation circuit segment 162. However, the resistance atthe gate terminals may vary depending on the materials and layersutilized in the first plurality of stacked transistors 172 and thedesired bandwidth of the first series connected attenuation circuitsegment 162. In the same manner, the resistance of the second and thirdresistive circuits 186, 188 may be selected to be high relative to thesecond and third continuous impedance range, respectively.

In the illustrated embodiment, each of the resistive circuits 184, 186,188 has resistors, Rg1, Rg2, Rg3, respectively. Each of the resistors,Rg1, Rg2, Rg3, may be coupled in series with the gate terminal of one ofthe plurality of stacked transistors 172, 174, 176 and another one ofthe plurality of stacked transistors 172, 174, 176. While the resistanceof each of the resistors Rg1 in the first series connected attenuationcircuit segment 162 may be the same, this is not required. For example,each of the resistors, Rg1 may have different resistances so long as theresistance of the resistance circuit 184 presented at the gate terminalsof the first plurality of stacked transistors 172 is high with respectto the first continuous impedance range. Similarly the resistance ofeach of the resistors Rg2, Rg3, may be the same but this however is notrequired. A common resistor R_common1, R_common2 may be utilized toprovide part of or all of the a high resistance between the gateterminals in each of the first, second, and third plurality of stackedtransistors 172, 174, 176 and the control circuit 152.

Next, the attenuation circuit segments 162, 164, 166 may also eachinclude a biasing circuit 190, 192, 194 coupled between the bodies ofeach of the first, second, and third plurality of stacked transistors172, 174, 176, respectively, and a ground node. The biasing circuits190, 192, 194 help assure the voltage levels of the control voltages,Vcontrol_A, Vcontrol_B, are better defined within the first, second, andthird plurality of stacked transistors 172, 174, 176. Furthermore, thebiasing circuits 190, 192, 194 each may include resistors, Rb1, Rb2,Rb3, respectively, to provide a body bias to the first, second, andthird plurality of stacked transistors 172, 174, 176. In thisembodiment, the resistors, Rb1 are each coupled in series with the bodyof one of the first plurality of stacked transistors 172. Similarly, theresistors Rb2, Rb3 are each coupled in series with the body of thesecond and third plurality of stacked transistors 174, 176,respectively. The resistance of resistors Rb1, Rb2, Rb3 may be high sothat the resistors Rb1, Rb2, Rb3 do not load the attenuation circuitsegments 162, 164, 166. Also, if the first, second, or third pluralityof stacked transistors 172, 174, 176 have unacceptably high parasiticcapacitances between the source terminals and body, or drain terminalsand body, the resistance of resistors Rb1, Rb2, Rb3 may be high enoughto render these the parasitic capacitances negligible.

Referring now to FIG. 9, a circuit diagram of another embodiment of anattenuator 196 having an attenuation circuit 198 in a Tee-typeconfiguration and a control circuit 200 is shown. The attenuationcircuit 196 has an input terminal 201 for receiving an input signal 202.The attenuation circuit 196 attenuates the input signal 202 inaccordance with the variable attenuation level set by the controlcircuit 200. This generates an attenuated output signal 204 that isoutput from an output terminal 206. To attenuate the input signal 202,the attenuation circuit 196 includes a first series connectedattenuation circuit segment 208, a second series connected attenuationcircuit segment 210, and a shunt connected attenuation circuit segment212. As in the previous embodiment, the first series connectedattenuation circuit segment 208 is coupled in series between the inputterminal 201 and an internal node 214 and the second series connectedattenuation circuit segment 210 is coupled in series between theinternal node 214 and the output terminal 206. The shunt connectedattenuation circuit segment 212 has a shunt connection to the internalnode 214 and is connected between the internal node 214 and a groundnode 216.

The attenuation circuit segments 208, 210, 212 each have a plurality ofstacked transistors 218, 220, 222, which in this example are bodyconnected stacked NFET devices. The number and type of transistors ineach of the plurality of stacked transistors 218, 220, 222 may be thesame or vary depending on the desired attenuation and linearitycharacteristics of the attenuation circuit 198. In this embodiment, eachof the transistors in the plurality of stacked transistors 218, 220, 222is a FET and the transistors are stacked by coupling the source anddrain terminals of each transistor in series. The first plurality ofstacked transistors 218 are coupled in the first series connectedattenuation circuit segment 208 to provide the first series connectedattenuation circuit segment 208 with a first variable impedance levelhaving a first continuous impedance range. In this embodiment, the firstplurality of stacked transistors 218 provide substantially all of theattenuation for the first series connected attenuation circuit segment208. Thus, the first variable impedance level of the first continuousimpedance range is essentially equal to the variable impedance levelhaving a continuous impedance range of the first plurality of stackedtransistors 218. Similarly, the second plurality of stacked transistors220 are coupled to provide the second series connected attenuationcircuit segment 210 with a second variable impedance level having asecond continuous impedance range and the third plurality of stackedtransistors 222 are coupled to provide the shunt connected attenuationcircuit segment 212 with a third variable impedance level having a thirdcontinuous impedance range. As with the first series connectedattenuation circuit segment 208, the second and third plurality ofstacked transistors 220, 222 provide substantially all of theattenuation in the second series connected attenuation circuit segment210 and in the shunt connected attenuation circuit segment 212.

The control circuit 200 may be operably associated with the plurality ofstacked transistors 218, 220, 222 in each of the attenuation circuitsegments 208, 210, 212 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel based on a signal level of an attenuation control signal 224 andthereby set the variable attenuation level. In this case, theattenuation control signal 224 may be the control voltage, V_control,having a continuous voltage range of 0-5V. The control circuit 200 maybe adapted to receive the control voltage, V_control, and generate afirst series segment control signal 226, a second series segment controlsignal 228, and a shunt segment control signal 230 having signal levelsthat are based on the voltage level of the control voltage, V_control.

The gate terminals of the plurality of stacked transistors 218, 220, 222may be coupled to the control circuit 200 to receive the first seriessegment control signal 226, the second series segment control signal228, and the shunt segment control signal 230. In this embodiment, thefirst series segment control signal 226 is a control voltage, Vcontrol_Athat is generated by the control circuit 200 based on the controlvoltage, V_control received by the control circuit 200 to control theoperation of the first plurality of stacked transistors 218. The secondseries segment control signal 228 is a control voltage, Vcontrol_B, thatis generated by the control circuit 200 based on the control voltage,V_control received by the control circuit 200 to control the operationof the first plurality of stacked transistors 218. The control voltages,Vcontrol_A and Vcontrol_B, may be different in accordance with thecharacteristics of the first and second plurality of stacked transistors218, 220 in the first and second series connected attenuation circuitsegments 208, 210. Similarly, the shunt segment control signal 230 is acontrol voltage, Vcontrol_C that is generated by the control circuit 200based on the control voltage, V_control to control the third pluralityof stacked transistors 222 in the shunt segment attenuation circuitsegment. Consequently, the voltage levels of the control voltages,Vcontrol_A, Vcontrol_B, Vcontrol_C are set in accordance to the transferfunction of the control circuit 200 which provide the appropriatevoltage to the gate terminals of the plurality of stacked transistors218, 220, 222 and set the first variable impedance level, the secondvariable impedance level, and the third variable impedance level. Inthis manner, the control circuit 200 is operably associated with each ofthe plurality of stacked transistors 218, 220, 222 to set the variableattenuation level of the attenuation circuit 198 at the desiredattenuation level based on the voltage level of the control voltage,V_control.

To neutralize parasitic capacitances and preserve high bandwidth, eachof the attenuation circuit segments 208, 210, 212 include a first,second, and third resistive circuit 232, 233, 234, respectively. In thisembodiment, each of the resistive circuits 232, 233, 234, haveresistors, Rg1, Rg2, Rg3. Each of the resistors, Rg1 in the first seriesconnected attenuation circuit segment are coupled between the gateterminals of one of the first plurality of stacked transistors 218 andanother one of the first plurality of stacked transistors 218.Similarly, each of the resistors Rg2, Rg3 is coupled between one of thesecond and third plurality of stacked transistors 220, 222,respectively, and another one of the second and third plurality ofstacked transistors 220, 222, respectively. The resistance of resistors,Rg1, may be selected to be high relative to the first continuousimpedance range provided by the first series connected attenuationcircuit segment 208. If the resistance of the resistive circuit 232 ishigh enough, the parasitic capacitances between the source terminals andgate terminals, and the drain terminals and gate terminals becomenegligible within the first continuous impedance range since theseparasitic capacitances are coupled to the high resistances of theresistors, Rg1.

Generally, the resistance, Rg1, should be high relative to the impedanceof the Cgs and Cgd parasitic capacitors at the frequency of interest andmay be at least around 10 times greater than the inverse of the highestvalue of the drain to source conductance of one of the first pluralityof stacked transistors 218. The control voltage, Vcontrol_A, may appeareffectively as a high impedance (open circuit) at the gate terminals ofthe first plurality of stacked transistors 218 so that the gateterminals of the first plurality of stacked transistors 218 do not loadthe first series connected attenuation circuit segment 208 at theoperating frequency. However, the resistance at the gate terminals mayvary depending on the materials and layers utilized in the firstplurality of stacked transistors 218 and also the desired bandwidth ofthe first series connected attenuation circuit segment 208. In the samemanner, the resistance of the resistors, Rg2 and Rg3, may be selected tobe high relative to the second and third continuous impedance range andimpedance of the parasitic capacitors Cgs, Cgd, respectively. A commonresistor, R_common1, R_common2, R_common3, may also be utilized toprovide part of or all of the a high resistance between the gateterminals in each of the first, second, and third plurality of stackedtransistors 218, 220, 222 and the control circuit 200.

It should be noted that while all of the resistors Rg1, Rg2, Rg3 inresistive circuits 232, 233, 234 are between the gate terminals of thefirst, second, and third plurality of stacked transistors 218, 220, 222,in alternative embodiments, one or more of the resistors Rg1, Rg2, Rg3,may be coupled in series with the gate terminals of one of the first,second, and third plurality of stacked transistors 218, 220, 222 asdescribed in FIG. 8. The resistive circuits 184, 186, 188, 232, 233, 234in FIGS. 8 and 9 may have any configuration so as to provide theappropriate resistances to the gate terminals of the plurality ofstacked transistors 172, 174, 176, 218, 220, 222.

In FIG. 9, the attenuation circuit segments 208, 210, 212 may also eachinclude a biasing circuit 235, 236, 237 coupled between the bodies ofeach of the first, second, and third plurality of stacked transistors218, 220, 222 respectively, and a ground node. The biasing circuits 235,236, 237 help assure the voltage levels of the control voltages,Vcontrol_A, Vcontrol_B, are better defined within the first, second, andthird plurality of stacked transistors 218, 220, 222. Furthermore, thebiasing circuits 235, 236, 237 each may include resistors, Rb1, Rb2,Rb3, respectively, to provide a body bias to the first, second, andthird plurality of stacked transistors 218, 220, 222. In thisembodiment, the resistors, Rb1 are each coupled in between the body ofone of the first plurality of stacked transistors 218 and the body ofanother one of the first plurality of stacked transistors 218.Similarly, the resistors Rb2, Rb3 are each coupled in between the bodyof one of the second and third plurality of stacked transistors 220,222, respectively and another one of the second and third plurality ofstacked transistors 220, 222, respectively. The resistance of resistorsRb1, Rb2, Rb3 may be high so that the resistors Rb1, Rb2, Rb3 do notload the attenuation circuit segments 208, 210, 212 and may be highrelative to the impedance of the C_(sb) and C_(db) parasitic capacitorsat the frequency of interest. Also, if the first, second, or thirdplurality of stacked transistors 218, 220, 222 have unacceptably highparasitic capacitances between the source terminals and body, or drainterminals and body, the resistance of resistors Rb1, Rb2, Rb3 may behigh enough to render loading due to these the parasitic capacitancesnegligible.

It should be noted that while all of the resistors Rb1, Rb2, Rb3 inbiasing circuits 235, 236, 237 are between the gate terminals of thefirst, second, and third plurality of stacked transistors 208, 210, 212,in alternative embodiments, one or more of the resistors Rb1, Rb2, Rb3,may be coupled in series with the gate terminals of one of the first,second, and third plurality of stacked transistors 208, 210, 212 asdescribed in FIG. 8. The biasing circuits 190, 192, 194, 235, 236, 237in FIGS. 8 and 9 may have any configuration so as to provide theappropriate resistances to the gate terminals of the plurality ofstacked transistors 172 174, 176, 218, 220, 222.

Referring now to FIG. 10, a circuit diagram of another embodiment of anattenuator 238 having an attenuation circuit 240 in a Tee-typeconfiguration and a control circuit 242 is shown. Similar to theprevious embodiments, the attenuation circuit 240 has a first and secondseries connected attenuation circuit segment 244, 246 and a shuntconnected attenuation circuit segment 248. Also each of the attenuationcircuit segments 244, 246, 248 include a first, second, and thirdplurality of stacked transistors 250, 252, 254. The control circuit 242generates a control segment control signal 256, in this case, Vcontrol_Ato control a first variable impedance level and a second variableimpedance level of the first and second series connected attenuationcircuit segments 244, 246 and a shunt connected segment control signal258 to control a third variable impedance level of the shunt connectedattenuation circuit segment 248. Also, similar to the embodimentexplained above for FIG. 9, each attenuation circuit segment 244, 246,248 includes resistive circuits 260, 262, 264 having resistors, Rg1,Rg2, Rg3, respectively. Also, the bodies of the first, second, and thirdplurality of stacked transistors 250, 252, 254 are floating and have nobias circuitry.

In this embodiment, a resistor, Rgex1, and capacitor, Cgex1, are coupledat one end of the first series connected attenuation circuit segment 244and a resistor, Rgex2, and capacitor, Cgex2, are coupled between thefirst and second series connected attenuation circuit segment 244, 246.A resistor, Rgex3, and capacitor, Cgex3 are coupled to another end ofthe second series connected attenuation circuit segment 246. A resistor,Rgex4, and capacitor, Cgex4, are coupled at one end of the shuntconnected attenuation circuit segment 248, and a resistor, Rex5, andcapacitor, Cgex5, are coupled to another end of the shunt connectedattenuation circuit segments. These resistors, Rgex1, Rgex2, Rgex3,Rgex4, Rgex5, and capacitors, Cgex1, Cgex2, Cgex3, Cgex4, Cgex5 form RCnetworks that help distribute an input signal 266 across the first,second, and third plurality of stacked transistors 250, 252, 254.

Referring now to FIG. 11, a circuit diagram of yet another embodiment ofan attenuator 268 having an attenuation circuit 270 in a Tee-typeconfiguration and a control circuit 272 is shown. The attenuationcircuit 270 has an input terminal 274 for receiving an input signal 276.The attenuation circuit 270 attenuates the input signal 276 inaccordance with the variable attenuation level set by the controlcircuit 272. This generates an attenuated output signal 278 that isoutput from an output terminal 280. To attenuate the input signal 276,the attenuation circuit 270 includes a first series connectedattenuation circuit segment 282, a second series connected attenuationcircuit segment 284, and a shunt connected attenuation circuit segment286. In this embodiment, the first series connected attenuation circuitsegment 282 is coupled in series between the input terminal 274 and aninternal node 288 and the second series connected attenuation circuitsegment 284 is coupled in series between the internal node 288 and theoutput terminal 280. The shunt connected attenuation circuit segment 286has a shunt connection to the internal node 288, and is connectedbetween the internal node 288 and a ground node 290.

The attenuation circuit segments 282, 284, 286 each have a plurality ofstacked transistors 292, 294, 296. The number and type of transistors ineach of the plurality of stacked transistors 292, 294, 296 may be thesame or vary depending on the desired attenuation characteristics of theattenuation circuit 270. In this embodiment, each of the transistors inthe plurality of stacked transistors 292, 294, 296 is a FET and thetransistors are stacked by coupling the source and drain terminals ofeach transistor in series. The first plurality of stacked transistors292 are coupled in the first series connected attenuation circuitsegment 282 to provide the first series connected attenuation circuitsegment 282 with a first variable impedance level having a firstcontinuous impedance range. In this embodiment, the first plurality ofstacked transistors 292 provides part of the attenuation for the firstseries connected attenuation circuit segment 282. Also coupled withinthe first series connected attenuation circuit segment 282 areresistors, R1, that also provide attenuation to the input signal 276 inthe first series connected attenuation circuit segment 282. Each of theresistors, R1, may be coupled in parallel with one of the firstplurality of stacked transistors 292 and each or only some of the firstplurality of stacked transistors 292 may have a transistor, R1. Sincethe impedance level of the first plurality of stacked transistors 292can be varied and the first plurality of stacked transistors 292 alsoattenuate the input signal 276, the first plurality of stackedtransistors 292 are coupled to provide the first series connectedattenuation circuit segment 282 with a first variable impedance levelwithin a first continuous impedance range. However, the first variableimpedance level and first continuous impedance range is not based solelyon the attenuation of the first plurality of stacked transistors 292 butalso on the attenuation of the resistors, R1. In this manner, theplurality of stacked transistors 292 may be provided to be smaller butstill provide the same level of attenuation. However, decreasing thesize of the first plurality of stacked transistors 292 may alsointroduce distortion and thus a trade-off may be provided betweenincreased linearity and a decrease in the area for the first pluralityof stacked transistors 292.

Similarly, the second plurality of stacked transistors 294 are coupledin the second series connected attenuation circuit segment 284 toprovide the second series connected attenuation circuit segment 284 witha second variable impedance level having a second continuous impedancerange. In this embodiment, the second plurality of stacked transistors294 provides part of the attenuation for the second series connectedattenuation circuit segment 284. Also, coupled within the second seriesconnected attenuation circuit segment 284 are resistors, R2, that alsoprovide attenuation to the input signal 276 in the second seriesconnected attenuation circuit segment 284. Each of the resistors, R2,may be coupled in parallel with one of the second plurality of stackedtransistors 294 and each or only some of the first plurality of stackedtransistors 294 may have a resistor, R2. Since the impedance level ofthe second plurality of stacked transistors 294 can be varied and thesecond plurality of stacked transistors 294 also attenuate the inputsignal 276, the second plurality of stacked transistors 294 are coupledto provide the second series connected attenuation circuit segment 284with the second variable impedance level within the second continuousimpedance range. However, the second variable impedance level and secondcontinuous impedance range is not based solely on the attenuation of thesecond plurality of stacked transistors 294 but also on the attenuationof the resistors, R2. In this manner, the plurality of stackedtransistors 294 may be smaller but still provide the same level ofattenuation. However, decreasing the size of the first plurality ofstacked transistors 294 may also introduce distortion and thus atrade-off may be provided between increased linearity and a decrease inthe area for the second plurality of stacked transistors 294.

The third plurality of stacked transistors 296 are coupled in the shuntconnected attenuation circuit segment 286 to provide the shunt connectedattenuation circuit segment 286 with a third variable impedance levelhaving a third continuous impedance range. In this embodiment, the thirdplurality of stacked transistors 296 provide substantially all of theattenuation for the shunt connected attenuation circuit segment 286.Thus, the third variable impedance level of the third continuousimpedance range provides a third variable impedance level that isessentially equal to the variable impedance level having a continuousimpedance range of the third plurality of stacked transistors 296.

It should be noted that in alternative embodiments, resistors, such asR1 or R2, may be coupled in parallel to the third plurality of stackedtransistors 296. In fact, any of the first, second, or third pluralityof stacked transistors 292, 294, 296 may have resistors R1 or R2 coupledin parallel depending on the requirements for the attenuator 268.

The control circuit 272 may be operably associated with the plurality ofstacked transistors 292, 294, 296 in each of the attenuation circuitsegments 282, 284, 286 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel based on a signal level of an attenuation control signal 298 andthereby adjust the variable attenuation level to a desired value withinthe continuous attenuation range. In this case, the attenuation controlsignal 298 may be the control voltage, V_control, having a continuousvoltage range of 0-5V. The control circuit 272 may be adapted to receivethe control voltage, V_control, and generate a first series segmentcontrol signal 300, a second series control signal 301, and a shuntsegment control signal 302 having signal levels that are based on thevoltage level of the control voltage, V_control.

The gate terminals of the plurality of stacked transistors 292, 294, 296may be coupled to the control circuit 272 to receive the first seriessegment control signal 300, the second series segment control signal301, and the shunt segment control signal 302. In this embodiment, thefirst series segment control signal 300 is a control voltage,Vcontrol_A, that is generated by the control circuit 272 based on thecontrol voltage, V_control, received by the control circuit 272 tocontrol the operation of the first plurality of stacked transistors 292.The second series segment control signal 301 is a control voltage,Vcontrol_B, that is generated by the control circuit 272 based on thecontrol voltage, V_control, received by the control circuit 272 tocontrol the operation of the second plurality of stacked transistors294. Similarly, the shunt segment control signal 302 is a controlvoltage, Vcontrol_C, that is generated by the control circuit 272 basedon the control voltage, V_control, to control the third plurality ofstacked transistors 296 in the shunt segment attenuation circuitsegment. Consequently, the voltage levels of the control voltages,Vcontrol_A, Vcontrol_B, Vcontrol_C are set in accordance to the transferfunction of the control circuit 272 which provide the appropriate biasto the gate terminals of the plurality of stacked transistors 292, 294,296 and set the first variable impedance level, the second variableimpedance level, and the third variable impedance level. In this manner,the control circuit 272 is operably associated with each of theplurality of stacked transistors 292, 294, 296 to control the firstvariable impedance level, the second variable impedance level, and thethird variable impedance level based on the voltage level of the controlvoltage, V_control. As explained above, the variable attenuation levelis based on the first variable impedance level, second variableimpedance level, and third variable impedance level. Accordingly, thevariable attenuation level of the attenuation circuit 270 is set at thedesired based on the voltage level of the control voltage, V_control.

To reduce parasitic capacitances and preserve high bandwidth, each ofthe attenuation circuit segments 282, 284, 286 include a first, second,and third resistive circuit 304, 306, 308, respectively. The resistivecircuits 304, 306, 308 may each be coupled between the first, second,and third plurality of stacked transistors 292, 294, 296 and the controlcircuit 272. The resistance of resistive circuits 304, 306, 308 may behigh relative to the first, second, and third continuous impedancerange, as explained above.

Referring now to FIG. 12, a circuit diagram of still yet anotherembodiment of an attenuator 310 having an attenuation circuit 312 in aTee-type configuration and a control circuit 314 is shown. Theattenuation circuit 312 has an input terminal 316 for receiving an inputsignal 318. The attenuation circuit 312 attenuates the input signal 318in accordance with the variable attenuation level that is adjustablewithin a continuous attenuation range and is set by the control circuit314. This generates an attenuated output signal 320 that is output froman output terminal 322. To attenuate the input signal 318, theattenuation circuit 312 includes a first series connected attenuationcircuit segment 324, a second series connected attenuation circuitsegment 326, and a shunt connected attenuation circuit segment 328. Inthis embodiment, the first series connected attenuation circuit segment324 is coupled in series between the input terminal 316 and internalnodes 329A, 329B and the second series connected attenuation circuitsegment 326 is coupled in series between the internal node 329A and theoutput terminal 322. The shunt connected attenuation circuit segment 328has a shunt connection to the internal nodes 329A, 329B and is connectedbetween the internal nodes 329A, 329B and a ground node 329C.

The attenuation circuit segments 324, 326, 328 each have a first,second, and third plurality of stacked transistors 330, 332, 334, whichin this example are floating body stacked NFET devices. The number andtype of transistors in each of the plurality of stacked transistors 330,332, 334 may be the same or vary depending on the desired attenuationcharacteristics of the attenuation circuit 312. In this embodiment, eachof the transistors in the plurality of stacked transistors 330, 332, 334is a FET and the transistors are stacked by coupling the source anddrain terminals of each transistor in series. The first plurality ofstacked transistors 330 are coupled in the first series connectedattenuation circuit segment 324 to provide the first series connectedattenuation circuit segment 324 with a first variable impedance levelhaving a first continuous impedance range. As in the previous embodimentdiscussed above for FIG. 11, the first plurality of stacked transistors330 provides part of the attenuation for the first series connectedattenuation circuit segment 324.

Also coupled within the first series connected attenuation circuitsegment 324 are a fourth plurality of stacked transistors 336 that alsoprovide attenuation to the input signal 318 in the first seriesconnected attenuation circuit segment 324. This fourth plurality ofstacked transistors 336 are also floating body stacked NFET devices.Each of the fourth plurality of stacked transistors 336 may be coupledin parallel with one of the first plurality of stacked transistors 330and each or only some of the first plurality of stacked transistors 330may be coupled to one of the fourth plurality of stacked transistors336. Since the impedance level of the first plurality of stackedtransistors 330 can be varied and the first plurality of stackedtransistors 330 also attenuate the input signal 318, the first pluralityof stacked transistors 330 are coupled to provide the first seriesconnected attenuation circuit segment 324 with a first variableimpedance level within a first continuous impedance range. However, thefourth plurality of stacked transistors 336 also have an impedance levelthat can be varied and the fourth plurality of stacked transistors 336also attenuate the input signal 318. Thus, the fourth plurality ofstacked transistors 336 are also coupled to provide the first variableimpedance level which in this example is a combination of the variableimpedance level of the first plurality of stacked transistors 330 andthe variable impedance level of the fourth plurality of stackedtransistors 336. By providing the fourth plurality of stackedtransistors 336, the first plurality of stacked transistors 330 may besmaller while allowing the first series connected attenuation circuitsegment 324 to provide the same level of attenuation. The secondplurality of stacked transistors 336 may have different degrees ofstacking and the transistors may be of a different size than the firstplurality of stacked transistors 330. In this manner, the first seriesconnected attenuation circuit segment 324 having the fourth plurality ofstacked transistors 336 in parallel with one or more of the firstplurality of stacked transistors 330 may utilize a more compact designwhile providing distortion cancellation, improved temperature stability,and greater bandwidth.

Similarly, the second plurality of stacked transistors 332 are coupledin the second series connected attenuation circuit segment 326 toprovide the second series connected attenuation circuit segment 326 witha second variable impedance level having a second continuous impedancerange. In this embodiment, the second plurality of stacked transistors332 provides part of the attenuation for the second series connectedattenuation circuit segment 326.

Also coupled within the second series connected attenuation circuitsegment 326 are a fifth plurality of stacked transistors 338, that alsoprovides attenuation to the input signal 318 in the second seriesconnected attenuation circuit segment 326 and are floating body stackedNFET devices. Each of the fifth plurality of stacked transistors 338 maybe coupled in parallel with one of the second plurality of stackedtransistors 332 and each or only some of the second plurality of stackedtransistors 332 may be coupled to one of the fifth plurality of stackedtransistors 338. Since the impedance level of the second plurality ofstacked transistors 332 can be varied and the second plurality ofstacked transistors 332 also attenuate the input signal 318, the secondplurality of stacked transistors 332 are coupled to provide the secondseries connected attenuation circuit segment 326 with a second variableimpedance level within a second continuous impedance range. However, thefifth plurality of stacked transistors 338 also have an impedance levelthat can be varied and the fifth plurality of stacked transistors 338also attenuate the input signal 318. Thus, the fifth plurality ofstacked transistors 338 are also coupled to provide the second variableimpedance level which in this example is a combination of the variableimpedance level of the second plurality of stacked transistors 332 andthe variable impedance level of the fifth plurality of stackedtransistors 338. By providing the fifth plurality of stacked transistors338, the second plurality of stacked transistors 332 may be smallerwhile allowing the second series connected attenuation circuit segment326 to provide the same level of attenuation. The second plurality ofstacked transistors 338 may have different degrees of stacking and thetransistors may be of a different size than the second plurality ofstacked transistors 332. In this manner, the second series connectedattenuation circuit segment 326 having the fifth plurality of stackedtransistors 338 in parallel with one or more of the second plurality ofstacked transistors 332 may utilize a more compact design whileproviding distortion cancellation and greater bandwidth.

The third plurality of stacked transistors 334 are coupled in the shuntconnected attenuation circuit segment 328 to provide the shunt connectedattenuation circuit segment 328 with a third variable impedance levelhaving a third continuous impedance range. In this embodiment, the thirdplurality of stacked transistors 334 provide substantially all of theattenuation for the shunt connected attenuation circuit segment 328.Thus, the third variable impedance level of the third continuousimpedance range is essentially equal to the variable impedance levelhaving a continuous impedance range of the third plurality of stackedtransistors 334.

Note that in alternative embodiments, another plurality of stackedtransistors, such as the fourth and fifth plurality of stackedtransistors, 336 and 338, may be coupled in parallel to the thirdplurality of stacked transistors 334. In fact, any of the first, second,or third plurality of stacked transistors 330, 332, 334 may have anotherplurality of stacked transistors coupled in parallel depending on therequirements for the attenuator 310.

The control circuit 314 may be operably associated with the plurality ofstacked transistors 330, 332, 334, 336, 338 in each of the attenuationcircuit segments 324, 326, 328 to control the first variable impedancelevel, the second variable impedance level, and the third variableimpedance level based on a signal level of an attenuation control signal298. In this case, the attenuation control signal 298 may be the controlvoltage, V_control, having a continuous voltage range of 0-5V. Thecontrol circuit 314 may be adapted to receive the control voltage,V_control, and generate a first series segment control signal 340, ashunt segment control signal 342, and a second series segment controlsignal 344 having signal levels that are based on the voltage level ofthe control voltage, V_control.

The gate terminals of the plurality of stacked transistors 330, 332,334, 336, 338 may be coupled to the control circuit 314 to receive thefirst series segment control signal 340, the shunt segment controlsignal 342, the second series segment control signal 344. In thisembodiment, the first series segment control signal 340 is a controlvoltage, Vcontrol_A that is generated by the control circuit 314 basedon the control voltage, V_control received by the control circuit 314 tocontrol the operation of the first and second plurality of stackedtransistors 330, 332 in the first and second series connectedattenuation circuit segments 324, 326. Similarly, the shunt segmentcontrol signal 342 is a control voltage, Vcontrol_B that is generated bythe control circuit 314 based on the control voltage, V_control tocontrol the third plurality of stacked transistors 334 in the shuntsegment attenuation circuit segment. Finally, the second series segmentcontrol signal 344 is a control voltage, Vcontrol_C, that is generatedby the control circuit 314 based on the control voltage, V_control, tocontrol the operation of the fourth and fifth plurality of stackedtransistors 336, 338 in the first and second series connectedattenuation circuit segments 324, 326. Consequently, the voltage levelsof the control voltages, Vcontrol_A, Vcontrol_B, Vcontrol_C, are set inaccordance to the transfer function of the control circuit 314 whichprovide the appropriate bias to the gate terminals of the plurality ofstacked transistors 330, 332, 334, 336, 338 and set the first variableimpedance level, the second variable impedance level, and the thirdvariable impedance level. In this manner, the control circuit 314 isoperably associated with each of the plurality of stacked transistors330, 332, 334, 336, 338 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel and the variable attenuation level of the attenuation circuit 312is set at the desired attenuation level based on the voltage level ofthe control voltage, V_control.

To reduce parasitic capacitances and preserve high bandwidth, theattenuation circuit segments 324, 326, 328 include a first, second,third, fourth, and fifth resistive circuit 346, 348, 350, 352, 354. Theresistive circuits 346, 348, 350, 352, 354 may each be coupled betweenone of the first, second, third, fourth, and fifth plurality of stackedtransistors 330, 332, 334, 336, 338 and the control circuit 314. Theresistance of each of the resistive circuits 346, 348, 350, 352, 354 maybe selected to be high relative to the continuous impedance ranges ofthe respective plurality of stacked transistors 330, 332, 334, 336, 338and thereby reduce or eliminate the parasitic capacitances in theplurality of stacked transistors 330, 332, 334, 336, 338. A commonresistor, R_common1, R_common2, R_common3, may also be utilized toprovide part of or all of the high resistance between the gate terminalsin each of the first, second, third, fourth, and fifth plurality ofstacked transistors 330, 332, 334, 336, 338 and the control circuit 314.

FIG. 13 illustrates another embodiment of an attenuator 355 having anattenuation circuit 356 and a control circuit 358. The attenuationcircuit 356 has a variable attenuation level having a continuousattenuation range. The variable attenuation level of the attenuationcircuit 356 is controlled by the control circuit 358. The controlcircuit 358 receives an attenuation control signal 360 which in thisexample is the control voltage, V_control. The control voltage,V_control, may be a DC voltage having a voltage level that can be variedto any voltage level within a continuous voltage range. In thisembodiment, the continuous voltage range of control voltage, V_control,is between 0-5V. The control circuit 358 is operably associated with theattenuation circuit 356 to control the variable attenuation level basedon the voltage level of the control voltage, V_control. Thus, thevariable attenuation level of the attenuation circuit 356 is variedwithin a continuous attenuation range as the voltage level of thecontrol voltage, V_control, is varied through the continuous voltagerange. If desirable, the transfer function of the control circuit 358may be configured so that the continuous voltage range of the controlvoltage, V_control, allows the control circuit 358 to span the entirecontinuous attenuation range of the attenuation circuit 356. Thus, thevariable attenuation level may be set to any attenuation level withinthe continuous attenuation range by the control circuit 358.

In this embodiment, the attenuation circuit 356 has an input terminal362 for receiving an input signal 364. The attenuation circuit 356attenuates the input signal 364 in accordance with the variableattenuation level to produce an attenuated output signal 366 that isoutput from an output terminal 368. To attenuate the input signal 364,the attenuation circuit 356 includes a first shunt connected attenuationcircuit segment 370, a second shunt connected attenuation circuitsegment 372, and a series connected attenuation circuit segment 374. Theattenuation circuit segments 370, 372, 374 are configured so that theattenuation circuit 356 is arranged in a Pi-type configuration. In thisembodiment, the first shunt connected attenuation circuit segment 370 iscoupled in shunt between an internal node 376 and another node 378. Theinternal node 376 may be connected to the input terminal 362. The secondshunt connected attenuation circuit segment 372 is coupled in shuntbetween an internal node 380 and another node 382. The internal node 380may be connected to the output terminal 368. The series connectedattenuation circuit segment 374 may be coupled in series between theinternal nodes 376, 380.

Each of the attenuation circuit segments 370, 372, 374 each have aplurality of stacked transistors. The plurality of stacked transistorsin each of the attenuation circuit segments 370, 372, 374 may be formedon a common substrate, or the plurality of stacked transistors in eachor some of the attenuation circuit segments 370, 372, 374 may be formedon separate substrates. Similarly, if the electronic components of thecontrol circuit 358 require a substrate, the control circuit 358 may bealso formed on a common substrate having one or more of the plurality ofstacked transistors from the attenuation circuit segments 370, 372, 374,or on a separate substrate.

The plurality of stacked transistors in the first shunt connectedattenuation circuit segment 370 are coupled to provide the first shuntconnected attenuation circuit segment 370 with a first variableimpedance level having a first continuous impedance range. Thus, theplurality of stacked transistors in the first shunt connectedattenuation circuit segment 370 may attenuate the input signal 364 inaccordance with the first variable impedance level. Similarly, theplurality of stacked transistors in the second shunt connectedattenuation circuit segment 372 are coupled to provide the second shuntconnected attenuation circuit segment 372 with a second variableimpedance level having a second continuous impedance range. Thus, theplurality of stacked transistors in the second shunt connectedattenuation circuit segment 372 may attenuate the input signal 364 inaccordance with the second variable impedance level. Finally, theplurality of stacked transistors in the series connected attenuationcircuit segment 374 are coupled to provide the series connectedattenuation circuit segment 374 with a third variable impedance levelhaving a third continuous impedance range. Thus, the plurality ofstacked transistors in the series connected attenuation circuit segment374 may attenuate the input signal 364 in accordance with the thirdvariable impedance level.

The variable attenuation level of the Pi-type configuration is afunction of the first variable impedance level, the second variableimpedance level, and the third variable impedance level (as well asother parameter such as the impedance at the input and output terminals362). Consequently, the variable attenuation level is based on thefirst, second, and third variable impedance level and the continuousattenuation range is based on the first, second, and third continuousattenuation ranges. Similarly, the total continuous impedance range ofthe attenuation circuit 356 may be related to the first continuousimpedance range, the second continuous impedance range, and the thirdcontinuous impedance range.

The variable attenuation level of the attenuation circuit 356 may bevaried within the continuous attenuation range by the control circuit358. The control circuit 358 sets the value of the variable attenuationlevel based on a voltage level of the control voltage, V_control. To dothis, the control circuit 358 may be operably associated with theplurality of stacked transistors in each of the attenuation circuitsegments 370, 372, 374 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel based on the voltage level of the control voltage, V_control. Inthe illustrated embodiment, the control circuit 358 is adapted toreceive the control voltage, V_control, and generate a shunt segmentcontrol signal 384 and a series segment control signal 386 having signallevels that are based on the voltage level of the control voltage,V_control. The series segment control signal 386 controls the thirdvariable impedance level by controlling the plurality of stackedtransistors in the series connected attenuation circuit segment 374.

In this embodiment, the shunt segment control signal 384 controls thefirst variable impedance level and the second variable impedance levelby controlling the plurality of stacked transistors in both of the firstand second shunt connected attenuation circuit segments 370, 372. Thismay be advantageous if the first and second shunt connected attenuationcircuit segments 370, 372 are the same and the first and second variableimpedance levels are to have the same value. Also, if the first andsecond shunt connected attenuation circuit segments 370, 372 aredifferent or if the first and second variable impedance levels are to beset to different values, electronic components may be provided withinthe first shunt connected attenuation circuit segment 370 and the secondshunt connected attenuation circuit segment 372 so that each shuntconnected attenuation circuit segment 370, 372 may be operated by thesame shunt segment control signal 384. In alternative embodiments, thecontrol circuit 358 may generate separate shunt segment control signals384 to separately control the plurality of stacked transistors in eachof the first and second shunt connected attenuation circuit segments370, 372.

As illustrated in FIG. 13, closed loop techniques are utilized togenerate the control voltage, V_control at the appropriate voltagelevels. A reference attenuator and feedback 388 receives a controlvoltage V_control_new and generates the control voltage, V_control, asexplained above for FIG. 7A, Next, FIG. 14 is a graph demonstrating theperformance of one embodiment of the attenuation circuit 356 describedin FIG. 13. In this case, the attenuation circuit segments 370, 372, 374each are provided with a stack of fourteen (14) MOSFETs that formed on asilicon-on-insulator type substrate.

The graph in FIG. 14 illustrates the variable attenuation level of theattenuation circuit 356 when the voltage level of the control voltage isat various values. The variable attenuation level in FIG. 14 may bemeasured from the input terminal 362 and can be approximated to be theS21 scattering parameter of the attenuation circuit 356. The variableattenuation level is plotted as a function of frequency. As illustratedby FIG. 14, once the variable attenuation level has been set by thevoltage level of the control voltage, V_control, the variableattenuation level remains very consistent even as the frequency of theinput signal 364 varies from 0-6 GHz. Furthermore, the total continuousattenuation range of the variable attenuation level of the attenuationcircuit 356 appears to have a minimum value of around 0.9 dB and amaximum value around 0.5-30 dB. The minimum value of the totalcontinuous attenuation range may be set by the series connectedattenuation circuit segment 374 while the maximum value of the variableattenuation level may be set by the first and second shunt connectedattenuation circuit segment 370, 372. There is some degradation in thelinearity of the variable attenuation level particularly at higherfrequencies and when the variable attenuation level is set to attenuatecloser to its minimum and maximum values. For example, the variableattenuation level appears to have a capacitive slope near its minimumvalue. This indicates the presence of some parasitic capacitance. On theother hand, variable attenuation level indicates some parasiticinductance by the inductive slope when set near its maximum value. Inall however, the attenuation circuit 356 has a huge bandwidth. Alsonoted, it should be noted that the degradation in the linearity of thevariable attenuation level may be reduced or eliminated through circuitdesign.

Referring now to FIG. 15, another embodiment of an attenuator 390 havingan attenuation circuit 392 and a control circuit 394. The attenuationcircuit 392 shown in FIG. 15 also includes a first shunt connectedattenuation circuit segment 396, a second shunt connected attenuationcircuit segment 398, and a series connected attenuation circuit segment400. The attenuation circuit segments 396, 398, 400 are configured sothat the attenuation circuit 392 is arranged as a Pi-type attenuationcircuit. However, in this attenuation circuit 392, the Pi-typeconfiguration also includes a first balancing attenuation circuitsegment 402. Thus, this Pi-type configuration is sometimes referred toas a balanced Pi-type configuration. In this embodiment, each of theattenuation circuit segments 396, 398, 400, 402 include a plurality ofstacked transistors.

Each of the attenuation circuit segments 396, 398, 400 may also have aplurality of stacked transistors. Note however that in alternativeembodiments, the balancing attenuation circuit segment 402 may not eachinclude a plurality of stacked transistors but for example may havepassive components. The plurality of stacked transistors in the firstshunt connected attenuation circuit segment 396 are coupled to providethe first shunt connected attenuation circuit segment 396 with a firstvariable impedance level having a first continuous impedance range.Thus, the plurality of stacked transistors in the first shunt connectedattenuation circuit segment 396 may attenuate an input signal 404 inaccordance with the first variable impedance level. Similarly, theplurality of stacked transistors in the second shunt connectedattenuation circuit segment 398 are coupled to provide the second shuntconnected attenuation circuit segment 398 with a second variableimpedance level having a second continuous impedance range. Thus, theplurality of stacked transistors in the second shunt connectedattenuation circuit segment 398 may attenuate the input signal 404 inaccordance with the second variable impedance level.

Next, the plurality of stacked transistors in the series connectedattenuation circuit segment 400 are coupled to provide the seriesconnected attenuation circuit segment 400 with a third variableimpedance level having a third continuous impedance range. Thus, theplurality of stacked transistors in the series connected attenuationcircuit segment 400 may attenuate the input signal 404 in accordancewith the third variable impedance level. Also, the plurality of stackedtransistors in the balancing attenuation circuit segment 402 are coupledto provide the balancing attenuation circuit segment 402 with a fourthvariable impedance level having a fourth continuous impedance range.Thus, the plurality of stacked transistors in the balancing attenuationcircuit segment 402 may attenuate the input signal 404 in accordancewith the fourth variable impedance level.

The control circuit 394 receives an attenuation control signal 406, inthis case a control voltage, V_control, and controls the attenuationcircuit segments 396, 398, 400, 402 based on the voltage level of thecontrol voltage, V_control. In this embodiment, the control circuit 394generates a first and a second shunt segment control signal 408, 410 tocontrol the plurality of stacked transistors in each of first and secondshunt connected attenuation circuit segments 396, 398. A series segmentcontrol signal 412 is generated to control the plurality of stackedtransistors in the series connected attenuation circuit segment 400. Abalancing segment control signal 414 may be generated to control theplurality of stacked transistors in the balancing attenuation circuitsegments 402. The segment control signals 408, 410, 412, 414 all have asignal level based on the voltage level of the control voltage,V_control. The transfer function of the control circuit 394 assures thatthe signal levels of each of the segment control signals 408, 410, 412,414 is at the appropriate signal level so that the variable attenuationlevel of the attenuation circuit 392 is at the desired attenuationlevel.

FIG. 16 illustrates yet another embodiment of an attenuator 416 havingan attenuation circuit 418 and a control circuit 420. The attenuationcircuit 418 shown in FIG. 16 also includes a first shunt connectedattenuation circuit segment 422, a second shunt connected attenuationcircuit segment 424, and a series connected attenuation circuit segment426. The attenuation circuit segments 422, 424, 426 are configured sothat the attenuation circuit 418 is also arranged in a Pi-typeattenuation configuration. However, in this attenuation circuit 418, thePi-type configuration also includes a bridge attenuation circuit segment428. Thus, attenuation circuit 418 may be referred to as being in abridged Pi-type configuration.

In this embodiment, each of the attenuation circuit segments 422, 424,426, 428 include a plurality of stacked transistors. Note however thatin alternative embodiments, the bridge attenuation circuit segment 428may not have a plurality of stacked transistors but for example may havepassive components. The plurality of stacked transistors in the firstshunt connected attenuation circuit segment 422 are coupled to providethe first shunt connected attenuation circuit segment 422 with a firstvariable impedance level having a first continuous impedance range.Thus, the plurality of stacked transistors in the first shunt connectedattenuation circuit segment 422 may attenuate an input signal 430 inaccordance with the first variable impedance level. Similarly, theplurality of stacked transistors in the second shunt connectedattenuation circuit segment 424 are coupled to provide the second shuntconnected attenuation circuit segment 424 with a second variableimpedance level having a second continuous impedance range. Thus, theplurality of stacked transistors in the second shunt connectedattenuation circuit segment 424 may attenuate the input signal 430 inaccordance with the second variable impedance level.

Next, the plurality of stacked transistors in the series connectedattenuation circuit segment 426 are coupled to provide the seriesconnected attenuation circuit segment 426 with a third variableimpedance level having a third continuous impedance range. Thus, theplurality of stacked transistors in the series connected attenuationcircuit segment 426 may attenuate the input signal 430 in accordancewith the third variable impedance level. Finally, the plurality ofstacked transistors in the bridge attenuation circuit segment 428 arecoupled to provide the bridge attenuation circuit segment 428 with afourth variable impedance level having a fourth continuous impedancerange. Thus, the plurality of stacked transistors in the bridgedattenuation circuit segment 428 may attenuate the input signal 430 inaccordance with the fourth variable impedance level.

The control circuit 420 may be operably associated with the plurality ofstacked transistors in each of the attenuation circuit segments 422,424, 426, 428 to control the first variable impedance level, the secondvariable impedance level, the third variable impedance level, and thefourth variable impedance level based on the voltage level of thecontrol voltage, V_control. In the illustrated embodiment, the controlcircuit 420 is adapted to receive the control voltage, V_control, andgenerate a shunt segment control signal 432, a series segment controlsignal 434, and a bridge segment control signal 436 having signal levelsthat are based on the voltage level of the control voltage, V_control.The shunt segment control signal 432 controls the first and secondvariable impedance level of the first and second shunt connectedattenuation circuit segments 422, 424. The series segment control signal434 controls the third variable impedance level of the series connectedattenuation circuit segments 426. Finally, the bridge segment controlsignal 436 controls the fourth variable impedance level of the bridgeattenuation circuit segment 428. In this manner, the variableattenuation level is varied within the continuous attenuation range.

Referring now to FIG. 17, a circuit diagram of one embodiment of anattenuator 438 having an attenuation circuit 440 in a Pi-typeconfiguration and a control circuit 442 is shown. All of the componentsin the attenuator 438 may be formed on a common substrate provided by aMonolific Microwave Integrated Chip (MMIC) or some or all of thecomponents may be provided on separate substrates. The attenuationcircuit 440 has an input terminal 444 for receiving an input signal 446.The attenuation circuit 440 attenuates the input signal 446 inaccordance with the variable attenuation level set by the controlcircuit 442. This generates an attenuated output signal 448 that isoutput from an output terminal 450. To attenuate the input signal 446,the attenuation circuit 440 includes a first shunt connected attenuationcircuit segment 452, a second shunt connected attenuation circuitsegment 454, and a series connected attenuation circuit segment 456. Inthis embodiment, the first shunt connected attenuation circuit segment452 is coupled in shunt between an internal node 458 and another node460. The internal node 458 is coupled to the input terminal 444 whichreceives the input signal 446. The second shunt connected attenuationcircuit segment 454 is coupled in shunt between an internal node 462 andanother node 465. The internal node 462 may be coupled to the outputterminal 450 that receives the attenuated output signal 448. The seriesconnected attenuation circuit segment 456 may be coupled in seriesbetween the internal nodes 458, 462.

The attenuation circuit segments 452, 454, 456 each have a plurality ofstacked transistors 464, 466, 468. The number and type of transistors ineach of the plurality of stacked transistors 464, 466, 468 may be thesame or vary depending on the desired distortion and attenuationcharacteristics of the attenuation circuit 440. In this embodiment, eachof the transistors in the plurality of stacked transistors 464, 466, 468is a FET and the transistors are stacked by coupling the source anddrain terminals of each transistor in series and are body connected. Thefirst plurality of stacked transistors 464 are coupled in the firstshunt connected attenuation circuit segment 452 to provide the firstshunt connected attenuation circuit segment 452 with a first variableimpedance level having a first continuous impedance range. In thisembodiment, the first plurality of stacked transistors 464 providesubstantially all of the attenuation for the first shunt connectedattenuation circuit segment 452. Thus, the first variable impedancelevel of the first continuous impedance range is essentially equal tothe variable impedance level having a continuous impedance range of thefirst plurality of stacked transistors 464. Similarly, the secondplurality of stacked transistors 466 are coupled to provide the secondshunt connected attenuation circuit segment 454 with a second variableimpedance level having a second continuous impedance range. Similarly,the third plurality of stacked transistors 468 are coupled to providethe series connected attenuation circuit segment 456 with a thirdvariable impedance level having a third continuous impedance range. Aswith the first shunt connected attenuation circuit segment 452, thesecond and third plurality of stacked transistors 466, 468 providesubstantially all of the attenuation in the second shunt connectedattenuation circuit segment 454 and in the series connected attenuationcircuit segment 456.

The control circuit 442 may be operably associated with the plurality ofstacked transistors 464, 466, 468 in each of the attenuation circuitsegments 452, 454, 456 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel based on a signal level of an attenuation control signal 470. Inthis case, the attenuation control signal 470 may be the controlvoltage, V_control, having a continuous voltage range of 0-5V. Thecontrol circuit 442 may be adapted to receive the control voltage,V_control, and generate a shunt segment control signal 472 and a seriessegment control signal 474 having signal levels that are based on thevoltage level of the control voltage, V_control.

The gate terminals of the plurality of stacked transistors 464, 466, 468may be coupled to the control circuit 442 to receive the shunt segmentcontrol signal 472 and the series segment control signal 474. In thisembodiment, the shunt segment control signal 472 is a control voltage,Vcontrol_A that is generated by the control circuit 442 based on thecontrol voltage, V_control that controls the operation of the first andsecond plurality of stacked transistors 464, 466 in the first and secondshunt connected attenuation circuit segments 452, 454. Similarly, theseries segment control signal 474 is a control voltage, Vcontrol_B thatis generated by the control circuit 442 based on the control voltage,V_control and control the third plurality of stacked transistors 468 inthe series connected attenuation circuit segment 456. Consequently, thevoltage levels of the control voltages, Vcontrol_A, Vcontrol_B, are setin accordance to a transfer function of the control circuit 442 whichprovide the appropriate bias to the gate terminals of the plurality ofstacked transistors 464, 466, 468 and set the first variable impedancelevel, the second variable impedance level, and the third variableimpedance level. In this manner, the control circuit 442 is operablyassociated with each of the plurality of stacked transistors 464, 466,468 to control the first variable impedance level, the second variableimpedance level, and the third variable impedance level based on thevoltage level of the control voltage, V_control and the variableattenuation level of the attenuation circuit 440 is set at the desiredattenuation level based on the voltage level of the control voltage,V_control.

To reduce parasitic capacitances and preserve high bandwidth, each ofthe attenuation circuit segments 452, 454, 456 include a first, second,and third resistive circuits 476, 478, 480, respectively. The resistivecircuits 476, 478, 480 may each be coupled between the first, second,and third plurality of stacked transistors 464, 466, 468 and the controlcircuit 442. The resistance of the first resistive circuit 476 may beselected to be high relative to the first continuous impedance rangeprovided by the first shunt connected attenuation circuit segment 452.If the resistance of the first resistive circuit 476 is high enough, theparasitic capacitances between the source terminals and gate terminals,and the drain terminals and gate terminals become negligible within thefirst continuous impedance range since these parasitic capacitances arecoupled to the high resistances of the first resistive circuit 476.Also, as discussed above, the resistance may be high relative to theC_(ds) and C_(gd) parasitic capacitances at the frequency of interest.

Generally, the first resistive circuit 476 may provide a resistance atthe gate terminals in the first plurality of stacked transistors 464that is at least around 10 times greater than the highest value of thefirst continuous impedance range provided by the first plurality ofstacked transistors 464. The control voltage, Vcontrol_A, may appeareffectively as an open circuit voltage at the gate terminals of thefirst plurality of stacked transistors 464 so that the gate terminals ofthe first plurality of stacked transistors 464 do not load the firstshunt connected attenuation circuit segment 452. However, the resistanceat the gate terminals may vary depending on the materials and layersutilized in the first plurality of stacked transistors 464 and thedesired bandwidth of the first shunt connected attenuation circuitsegment 452. In the same manner, the resistance of the second and thirdresistive circuits 478, 480 may be selected to be high relative to thesecond and third continuous impedance range, respectively.

In the illustrated embodiment, each of the resistive circuits 476, 478,480 has resistors, Rg1, Rg2, Rg3, respectively. Each of the resistors,Rg1, Rg2, Rg3, may be coupled between the gate terminal of one of theplurality of stacked transistors 464, 466, 468 and another one of theplurality of stacked transistors 464, 466, 468. While the resistance ofeach of the resistors Rg1 in the first shunt connected attenuationcircuit segment 452 may be the same, this is not required. For example,each of the resistors, Rg1 may have different resistances so long as theresistance of the first resistive circuit 476 presented at the gateterminals of the first plurality of stacked transistors 464 is high withrespect to the first continuous impedance range. Similarly theresistance of each of the resistors Rg2, Rg3, may be the same but thishowever is not required. A common resistor 482, 484, 486 may also beutilized to provide part of or all of the a high resistance between thegate terminals in each of the first, second, and third plurality ofstacked transistors 464, 466, 468 and the control circuit 442.

Next, the attenuation circuit segments 452, 454, 456 may also eachinclude a biasing circuit 488, 490, 492 coupled between the bodies ofeach of the first, second, and third plurality of stacked transistors464, 466, 468, respectively, and a ground node. The biasing circuits488, 490, 492 help assure the voltage levels of the control voltages,Vcontrol_A, Vcontrol_B, are better defined within the first, second, andthird plurality of stacked transistors 464, 466, 468. Furthermore, thebiasing circuits 488, 490, 492 each may include resistors, Rb1, Rb2,Rb3, respectively, to provide a body bias to the first, second, andthird plurality of stacked transistors 464, 466, 468. In thisembodiment, the resistors, Rb1 are coupled between the body of one ofthe first plurality of stacked transistors 464 and another one of thefirst plurality of stacked transistors 464. Similarly, the resistorsRb2, Rb3 are coupled between the body of one of the second and thirdplurality of stacked transistors 466, 468, respectively and the body ofanother one of the second and third plurality of stacked transistors466, 468, respectively. The resistance of resistors Rb1, Rb2, Rb3 may behigh relative to their respective C_(sb) and C_(db) parasiticcapacitances so that the resistors Rb1, Rb2, Rb3 do not load theattenuation circuit segments 452, 454, 456. Also, if the first, second,or third plurality of stacked transistors 464, 466, 468 haveunacceptably high parasitic capacitances between the source terminalsand body, or drain terminals and body, the resistance of resistors Rb1,Rb2, Rb3 may be high enough to render these the parasitic capacitancesnegligible. A common biasing resistor 494, 496, 497 may also be providedto provide a high resistance between the bodies of the first, second, orthird plurality of stacked transistors 464, 466, 468 and a ground node.

Referring now to FIG. 18, a circuit diagram of another embodiment of anattenuator 498 having an attenuation circuit 500 in a Pi-typeconfiguration and a control circuit 502 is shown. The attenuationcircuit 500 has an input terminal 504 for receiving an input signal 506.The attenuation circuit 500 attenuates the input signal 506 inaccordance with the variable attenuation level set by the controlcircuit 502. This generates an attenuated output signal 508 that isoutput from an output terminal 510. To attenuate the input signal 506,the attenuation circuit 500 includes a first shunt connected attenuationcircuit segment 512, a second shunt connected attenuation circuitsegment 514, and a shunt connected attenuation circuit segment 516.

The attenuation circuit segments 512, 514, 516 each have a plurality ofstacked transistors 518, 520, 522, which in this example are bodyconnected stacked FET devices. The number and type of transistors ineach of the plurality of stacked transistors 518, 520, 522 may be thesame or vary depending on the desired attenuation characteristics of theattenuation circuit 500. In this embodiment, each of the transistors inthe plurality of stacked transistors 518, 520, 522 is a FET and thetransistors are stacked by coupling the source and drain terminals ofeach transistor in series. The first plurality of stacked transistors518 are coupled in the first shunt connected attenuation circuit segment512 to provide the first shunt connected attenuation circuit segment 512with a first variable impedance level having a first continuousimpedance range. In this embodiment, the first plurality of stackedtransistors 518 provide substantially all of the attenuation for thefirst shunt connected attenuation circuit segment 512. Thus, the firstvariable impedance level of the first continuous impedance range isessentially equal to the variable impedance level having a continuousimpedance range of the first plurality of stacked transistors 518.Similarly, the second plurality of stacked transistors 520 are coupledto provide the second shunt connected attenuation circuit segment 514with a second variable impedance level having a second continuousimpedance range and the third plurality of stacked transistors 522 arecoupled to provide the series connected attenuation circuit segment 516with a third variable impedance level having a third continuousimpedance range. As with the first shunt connected attenuation circuitsegment 512, the second and third plurality of stacked transistors 520,522 provide substantially all of the attenuation in the second shuntconnected attenuation circuit segment 514 and in the series connectedattenuation circuit segment 516.

The control circuit 502 may be operably associated with the plurality ofstacked transistors 518, 520, 522 in each of the attenuation circuitsegments 512, 514, 516 to control the first variable impedance level,the second variable impedance level, and the third variable impedancelevel based on a signal level of an attenuation control signal 524. Thevariable attenuation level is based on the first, second, and thirdvariable impedance level. In this case, the attenuation control signal524 may be the control voltage, V_control, having a continuous voltagerange of 0-5V. The control circuit 502 may be adapted to receive thecontrol voltage, V_control, and generate a shunt segment control signal526 and a series segment control signal 528 having signal levels thatare based on the voltage level of the control voltage, V_control. Thegate terminals of the plurality of stacked transistors 518, 520, 522 maybe coupled to the control circuit 502 to receive the shunt segmentcontrol signal 526 and the series segment control signal 528. In thisembodiment, the shunt segment control signal 526 is a control voltage,Vcontrol_A and the series segment control signal 528 is a controlvoltage, Vcontrol_B, which are generated by the control circuit 502based on the control voltage, V_control. Consequently, the voltagelevels of the control voltages, Vcontrol_A, Vcontrol_B, are set inaccordance to the transfer function of the control circuit 502 whichprovide the appropriate bias to the gate terminals of the plurality ofstacked transistors 518, 520, 522 and set the first variable impedancelevel, the second variable impedance level, and the third variableimpedance level. In this manner, the control circuit 502 is operablyassociated with each of the plurality of stacked transistors 518, 520,522 to control the first variable impedance level, the second variableimpedance level, and the third variable impedance level based on thevoltage level of the control voltage, V_control. Thus, the variableattenuation level of the attenuation circuit 500 is set at the desiredattenuation level within the total continuous impedance range based onthe voltage level of the control voltage, V_control.

To reduce parasitic capacitances and preserve high bandwidth, each ofthe attenuation circuit segments 512, 514, 516 include a first, second,and third resistive circuit 530, 532, 534, respectively. In thisembodiment, each of the resistive circuits 530, 532, 534, have resistorsRg1, Rg2, Rg3 coupled in series with the gate terminals of the first,second, and third plurality of stacked transistors 518, 520, 522. Theresistance of the resistive circuit 530 may be selected to be highrelative to the first continuous impedance range provided by the firstshunt connected attenuation circuit segment 512 and high relative to theC_(gs) and C_(gd), at the frequencies of interest. If the resistance ofthe resistive circuit 530 is high enough, the parasitic capacitancesbetween the source terminals and gate terminals, and the drain terminalsand gate terminals of the first plurality of stacked transistors 518become negligible within the first continuous impedance range sincethese parasitic capacitances are coupled to the high resistancesprovided by the resistive circuit 530.

Generally, the resistor Rg1, may be at least around 10 times greaterthan the inverse of the highest value of the drain to source conductanceof one of the first plurality of stacked transistors 518, and the RChigh pass pole created by Rg1 and C_(gs) and C_(gd) may ideally be lowerthan the frequency of operation. The control voltage, Vcontrol_A, mayappear effectively as an open circuit voltage at the gate terminals ofthe first plurality of stacked transistors 518 so that the gateterminals of the first plurality of stacked transistors 518 do not loadthe first shunt connected attenuation circuit segment 512. However, theresistance at the gate terminals may vary depending on the materials andlayers utilized in the first plurality of stacked transistors 518 andalso the desired bandwidth of the first shunt connected attenuationcircuit segment 512. In the same manner, the resistance of the secondand third resistive circuits 532, 534 may be selected to be highrelative to the second and third continuous impedance range,respectively.

It should be noted that while all of the resistors Rg1, Rg2, Rg3 inresistive circuits 530, 532, 534 are coupled in series with one of thegate terminals of the first, second, and third plurality of stackedtransistors 518, 520, 522. In alternative embodiments, one or more ofthe resistors Rg1, Rg2, Rg3, may be coupled between one of the gateterminals of one of the first, second, and third plurality of stackedtransistors 518, 520, 522 and another of the gate terminals of anotherone of the first, second, and third plurality of stacked transistors518, 520, 522, as described in FIG. 17. The resistive circuits 476, 478,480, 530, 532, 534 in FIGS. 17 and 18 may have any configuration so asto provide the appropriate resistances to the gate terminals of theplurality of stacked transistors 464, 466, 468, 518, 520, 522.

Referring now to FIG. 19, a circuit diagram of another embodiment of anattenuator 536 having an attenuation circuit 538 in a Pi-typeconfiguration and a control circuit 540 is shown. To attenuate an inputsignal 542, the attenuation circuit 538 includes a first shunt connectedattenuation circuit segment 544, a second shunt connected attenuationcircuit segment 546, and a series connected attenuation circuit segment548.

The attenuation circuit segments 544, 546, 548 each have a plurality ofstacked transistors 550, 552, 554, which in this example are bodyconnected stacked FET devices. The number and type of transistors ineach of the plurality of stacked transistors 550, 552, 554 may be thesame or vary depending on the desired attenuation characteristics of theattenuation circuit 538. In this embodiment, each of the transistors inthe plurality of stacked transistors 550, 552, 554 is a FET and thetransistors are stacked by coupling the source and drain terminals ofeach transistor in series. The first shunt connected attenuation circuitsegment 544 has a first variable impedance level within a firstcontinuous impedance range. In this embodiment, the first plurality ofstacked transistors 550 has an impedance level that may be varied withina continuous impedance range. Thus, the first plurality of stackedtransistors 550 are coupled in the first shunt connected attenuationcircuit segment 544 to provide the first variable impedance level.However, the resistor, R1, is coupled in series with the first pluralityof stacked transistors 550 and also provides attenuation within thefirst shunt connected attenuation circuit segment 544. Thus, the firstvariable impedance level and the first continuous impedance range arealso defined by the resistor, R1. Similarly, the second plurality ofstacked transistors 552 are coupled within the second shunt connectedattenuation circuit segment 546 to provide a second variable impedancelevel having a second continuous impedance range. However, resistor R2is also provided in series with the second plurality of stackedtransistors 552 to attenuate within the second shunt connectedattenuation circuit segment 546. Thus, the second variable impedancelevel and the second continuous impedance range also defined by theresistor R2.

Finally, the series connected attenuation circuit segment 548 has athird variable impedance level having a third continuous impedancerange. The third plurality of stacked transistors 554 are also coupledwithin the series connected attenuation circuit segment 548 to providethe third variable impedance level having the third continuous impedancerange. However, resistor R3 is coupled in parallel with the thirdplurality of stacked transistors 554 to provide attenuation in theseries connected attenuation circuit segment 548. Thus, the thirdvariable impedance level and the third continuous impedance range arealso defined by the resistor R3.

The resistors R1, R2, R3, provide an improvement in the linearity of theattenuation circuit 538 but may also be utilized in the otherattenuation circuits described in this disclosure, including theTee-type configurations described above. The resistors R1, R2 improvelinearity by defining the maximum impedance level of the attenuationcircuit 538. In an alternative embodiment, the resistors R1, R2 couldalso be placed in parallel with the first and second plurality ofstacked transistors 550, 552, respectively. In another alternativeembodiment, the resistors R1, R2 could be replaced by a plurality ofresistors each coupled in parallel with one of the first plurality ofstacked transistors 550 or second plurality of stacked transistors 552.In yet another alternative embodiment, the resistors R1 and R2 may eachbe replaced with a transistor or a stack of transistors operated usingrelatively large control voltages, which may be much greater than thethreshold voltages of the transistor(s).

The resistor R3 also provides improved linearity within the attenuationcircuit 538 by defining the minimum impedance level of the attenuationcircuit 538. In an alternative embodiment, the resistor R3 may becoupled in series with the third plurality of stacked transistors 554.In yet another alternative embodiment, the resistor, R3 may be replacedwith a plurality of resistors, each coupled in parallel with one of thethird plurality of stacked transistors. In still yet another embodiment,the resistor R3 may be replaced with a transistor or another pluralityof stacked transistors operated using relatively large control voltages,which may be much greater than the threshold voltages of thetransistor(s). In fact, any resistive circuit may be utilized to providethe desired minimum and/or maximum impedance levels of the attenuationcircuit 538 and the other attenuation circuits described throughout thisdisclosure.

The control circuit 540 in FIG. 19 may be operably associated with theplurality of stacked transistors 550, 552, 554 in each of theattenuation circuit segments 544, 546, 548 to control the first variableimpedance level, the second variable impedance level, and the thirdvariable impedance level based on a signal level of an attenuationcontrol signal 556. In this case, the attenuation control signal 556 maybe the control voltage, V_control, having a continuous voltage range of0-5V. The control circuit 540 may be adapted to receive the controlvoltage, V_control, and generate a shunt segment control signal 558 anda series segment control signal 560 having signal levels that are basedon the voltage level of the control voltage, V_control. The gateterminals of the plurality of stacked transistors 550, 552, 554 may becoupled to the control circuit 540 to receive the shunt segment controlsignal 558 and the series segment control signal 560. In thisembodiment, the shunt segment control signal 558 is a control voltage,Vcontrol_A and the series segment control signal 560 is a controlvoltage, Vcontrol_B, which are generated by the control circuit 540based on the control voltage, V_control. Consequently, the voltagelevels of the control voltages, Vcontrol_A, Vcontrol_B, are set inaccordance to the transfer function of the control circuit 540 whichprovide the appropriate voltage to the gate terminals of the pluralityof stacked transistors 550, 552, 554 and set the first variableimpedance level, the second variable impedance level, and the thirdvariable impedance level. In this manner, the control circuit 540 isoperably associated with each of the plurality of stacked transistors550, 552, 554 to control the variable attenuation level of theattenuation circuit 538 based on the voltage level of the controlvoltage, V_control. Also, each of the attenuation circuit segments 544,546, 548 include a first, second, and third resistive circuit 562, 564,566, respectively to reduce distortion. In this embodiment, each of theresistive circuits 562, 564, 566, have resistors, Rg1, Rg2, Rg3 coupledin series with the gate terminals of the first, second, and thirdplurality of stacked transistors 550, 552, 554.

Referring now to FIG. 20, an attenuator 567 may also have attenuationcircuits 568, 570 cascaded with one another to attenuate an input signal572. For example, in the illustrated embodiment of FIG. 20, theattenuator 567 has a first attenuation circuit 568 cascaded with asecond attenuation circuit 570. In this embodiment, both the first andthe second attenuation circuits 568, 570 are configured in a Tee typeconfiguration. Each attenuation circuit 568, 570 is coupled between aninput terminal 574 and an output terminal 576 to attenuate the inputsignal 572 and generate an attenuated output signal 578. The firstattenuation circuit 568 includes a first series connected attenuationcircuit segment 580, a second series connected attenuation circuitsegment 582, and a first shunt connected attenuation circuit segment584. The second attenuation circuit 570 includes a third seriesconnected attenuation circuit segment 586, a fourth series connectedattenuation circuit segment 588, and a second shunt connectedattenuation circuit segment 590. Each attenuation circuit segment 580,582, 584, 586, 588, 590 has a plurality of stacked transistors coupledthat are coupled in the attenuation circuit segments 580, 582, 584, 586,588, 590 to provide a total variable attenuation level having acontinuous attenuation range between the input and output terminals 609,611.

To control the variable impedance levels of each of the attenuationcircuit segments 580, 582, 584, 586, 588, 590, the attenuator 567 has acontrol circuit 592. In this embodiment, the control circuit 592includes a first control device 594, a second control device 596, and athird control device 598. The first control device 594 is adapted toreceive a control voltage, V_control that controls the total variableattenuation level of the attenuator 567. To do this, the first controldevice 594 generates a first attenuation circuit control signal 600based on the control voltage, V_control, that is utilized to control thevariable attenuation level of the first attenuation circuit 568. Thefirst attenuation circuit control signal 600 may be a control voltage,Vcontrol_A, having a continuous voltage range. The first control device594 also generates a second attenuation circuit control signal 602 basedon the control voltage, V_control that is utilized to control thevariable attenuation level of the second attenuation circuit 570. Thesecond attenuation circuit control signal 602 may be a control voltage,Vcontrol_B having a continuous voltage range. The transfer function ofthe illustrated first control device 594 is configured to generate thecontrol voltages, Vcontrol_A, Vcontrol_B, at the appropriate voltagelevels based on the voltage level of the control voltage, V_control.

Next, the control voltage, Vcontrol_A, is received by the second controldevice 596. Based on the voltage level of the control voltage,Vcontrol_A, the second control device 596 generates a first seriessegment control signal 604 and a first shunt segment control signal 606.The first series segment control signal 604 is received to control theoperation of the plurality of stacked transistors in each of the firstand second series connected attenuation circuit segments 580, 582 in thefirst attenuation circuit 568. The first shunt segment control signal606 controls the operation of the plurality of stacked transistors inthe first shunt connected attenuation circuit segment 584. In thismanner, the second control device 596 can control the variableattenuation level of the first attenuation circuit 568. Similarly, thecontrol voltage, Vcontrol_B is received by the third control device 598.Based on the voltage level of the control voltage, Vcontrol_B, the thirdcontrol device 598 generates a second series segment control signal 608and a second shunt segment control signal 610. The second series segmentcontrol signal 608 is received to control the operation of the pluralityof stacked transistors in each of the third and fourth series connectedattenuation circuit segments 586, 588 in the second attenuation circuit570. The second shunt segment control signal 610 controls the operationof the plurality of stacked transistors in the second shunt connectedattenuation circuit segment 590. In this manner, the third controldevice 598 controls the variable attenuation level of the secondattenuation circuit 570. By controlling the variable attenuation levelof both of the attenuation circuits 568, 570, the control circuit 592can control the total variable attenuation level of the attenuator 567based on the voltage level of the control voltage, V_control.

In alternative embodiments, the attenuator 567 may have any number ofadditional attenuation circuits cascaded with the first and secondattenuation circuits 568, 570. Additional control devices may beprovided in the control circuit 592 in addition to the first, second,and third control devices 594, 596, 598 to control the additionalattenuation circuits. Each attenuation circuit 568, 570 provides avariable attenuation level from its input to its output and the providethe total variable attenuation level of the attenuator 567 from theinput terminal 609 to the output terminal 611

Referring now to FIG. 21, an attenuator 612 may have cascadedattenuation circuits 614, 616 that have any combination of attenuatorconfigurations. In the embodiment of the attenuator 612 illustrated inFIG. 21, a first attenuation circuit 614 is in a Tee-type configurationand a second attenuation circuit 616 is in a Pi-type configuration. Eachattenuation circuit 614, 616 is coupled between an input terminal 618and an output terminal 620 to attenuate an input signal 622 and generatean attenuated output signal 624. The first attenuation circuit 614includes a first series connected attenuation circuit segment 626, asecond series connected attenuation circuit segment 628, and a firstshunt connected attenuation circuit segment 630. The second attenuationcircuit 616 includes a second shunt connected attenuation circuitsegment 632, a third shunt connected attenuation circuit segment 634,and a third series connected attenuation circuit segment 636. Eachattenuation circuit segment 626, 628, 630, 632, 634, 636 has a pluralityof stacked transistors that are coupled in the attenuation circuitsegment 626, 628, 630, 632, 634, 636 to provide a variable impedancelevel having a continuous impedance range.

To control the variable impedance levels of each of the attenuationcircuit segments 626, 628, 630, 632, 634, 636, the attenuator 612 has acontrol circuit 638. In this embodiment, the control circuit 638includes a first control device 640, a second control device 642, and athird control device 644. The first control device 640 is adapted toreceive a control voltage, V_control that controls the total variableattenuation level of the attenuator 612. To do this, the first controldevice 640 generates a first attenuation circuit control signal 646based on the control voltage, V_control, that is utilized to control thevariable attenuation level of the first attenuation circuit 614. Thefirst attenuation control signal 646 may be a control voltage,Vcontrol_A, having a continuous voltage range. The first control device640 also generates a second attenuation circuit control signal 648 basedon the control voltage, V_control that is utilized to control thevariable attenuation level of the second attenuation circuit 616. Thesecond attenuation circuit control signal 648 may be a control voltage,Vcontrol_B, having a continuous voltage range. The transfer function ofthe illustrated first control device 640 is configured to generate thecontrol voltages, Vcontrol_A, Vcontrol_B, at the appropriate voltagelevels based on the voltage level of the control voltage, V_control.

Next, the control voltage, Vcontrol_A is received by the second controldevice 642. Based on the voltage level of the control voltage,Vcontrol_A, the second control device 642 generates a first seriessegment control signal 650 and a first shunt segment control signal 652.The first series segment control signal 650 is received to control theoperation of the plurality of stacked transistors in each of the firstand second series connected attenuation circuit segments 626, 628 in thefirst attenuation circuit 614. The first shunt segment control signal652 controls the operation of the plurality of stacked transistors inthe first shunt connected attenuation circuit segment 630. In thismanner, the second control device 642 can control the variableattenuation level of the first attenuation circuit 614. Similarly, thecontrol voltage, Vcontrol_B is received by the third control device 644.Based on the voltage level of the control voltage, Vcontrol_B, the thirdcontrol device 644 generates a second shunt segment control signal 654and a second series segment control signal 656. The second shunt segmentcontrol signal 654 is received to control the operation of the pluralityof stacked transistors in each of the second and third shunt connectedattenuation circuit segments 632, 634 in the second attenuation circuit616. The second series segment control signal 656 controls the operationof the plurality of stacked transistors in the third series connectedattenuation circuit segment 636. By controlling the variable attenuationlevel of both of the attenuation circuits 614, 616 the control circuit638 can control the total variable attenuation level of the attenuator612 based on the voltage level of the control voltage, V_control.

FIG. 22 is a circuit diagram of one embodiment of an attenuator 658having a first attenuation circuit 660 in a Tee-type configurationcascaded with a second attenuation circuit 661 in a Pi-typeconfiguration. The first attenuation circuit 660 includes a first seriesconnected attenuation circuit segment 662, a second series connectedattenuation circuit segment 664, and a first shunt connected attenuationcircuit segment 666. The first and second series connected attenuationcircuit segments 662, 664 each include a stack 668, 670 of twenty-four(24) MOSFETs. In this embodiment, the MOSFETs in each stack 668, 670 areformed on a silicon-on-insulator type substrate and the MOSFETs have awidth around 4 mm and a depth around 0.32 microns. The first shuntconnected attenuation circuit segment 666 includes a stack 672 offorty-eight (48) MOSFETs formed on the same silicon-on-insulator typesubstrate.

Next, the second attenuation circuit 661 includes a second shuntconnected attenuation circuit segment 674, a third shunt connectedattenuation circuit segment 676, and a third series connectedattenuation circuit segment 678. Each of the second and third shuntconnected attenuation circuit segments, 674, 676 in the secondattenuation circuit 661 has a stack 680, 682 of forty-eight (48) MOSFETsformed on the silicon-on-insulator type substrate. In this embodiment,the MOSFETs in each stack 680, 682 have a width of around 1 mm and adepth of around 0.32 microns. The third series connected attenuationcircuit segment 678 in the second attenuation circuit 661 has a stack684 of twenty-four (24) MOSFETs formed on the silicon-on-insulator typesubstrate.

To control the variable attenuation level of the first attenuationcircuit 660, a control circuit 686 is adapted to receive a controlvoltage, V_control, having a continuous voltage range from 0-5V. Thecontrol circuit 686 may be operable to generate a control voltage,VT_series that controls the stack 668, 670 of MOSFETs in the first andsecond series connected attenuation circuit segments 662, 664 of thefirst attenuation circuit 660. The control circuit 686 may generate acontrol voltage, VT_shunt that controls the stack 672 of MOSFETs in thefirst shunt connected attenuation circuit segment 666 of the firstattenuation circuit 660. To control the variable attenuation level ofthe second attenuation circuit 661, the control circuit 686 generates acontrol voltage, Vpi_series, that controls the stack 684 in the thirdseries connected attenuation circuit segment of the second attenuationcircuit 661. Also, a control voltage, Vpi_shunt, may be generated by thecontrol circuit 686 to control the stacks 680, 682 in the second andthird shunt connected attenuation circuit segments 674, 676 of thesecond attenuation circuit segment 661. By controlling the variableattenuation level of the first attenuation circuit 660 and the variableattenuation level of the second attenuation circuit 661, the controlcircuit 686 can control the total variable attenuation level of theattenuator 658 based on the voltage level of the control voltage,V_control.

Referring now to FIG. 22 and FIG. 23, FIG. 23 is a graph that plots thetotal variable attenuation level of the cascaded attenuation circuits660, 661, as measured from an input terminal 688, throughout the rangeof the control voltage, V_control, 0-5V. The total variable attenuationlevel has a total continuous attenuation range of about 3 dB to 35 dB. Afirst line 690 plots the total variable attenuation level of theattenuator 658 through the total continuous attenuation range at thefrequency of 10 MHz. A second line 692, third line 694, fourth line 696,fifth line 698 plots the total variable attenuation level at thefrequencies of 100 MHz, 500 MHz, 1 GHz, 2 GHz, and 3 GHz, respectively.FIG. 23 demonstrates that the total variable attenuation level of theattenuator 658 may be remarkably consistent and linear in dB throughouta large bandwidth.

Referring now to FIGS. 22 and 24, FIG. 24 is a graph that plots thetotal variable attenuation level, as measured from the input terminal688, versus frequency when the control voltage, V_control is set atdifferent voltage levels. A first line 700 plots the total variableattenuation level when the control voltage, V_control, is at 0V. Asecond line 702, third line 704, fourth line 706, fifth line 708, sixthline 710, seventh line 712, eighth line 714, and ninth line 716, plotthe total variable attenuation level when the control voltage,V_control, is set at 1.0V, 2.0V, 2.5V, 3.0V, 3.5V, 4.0V, 4.5V, and 5V,respectively. FIG. 24 also demonstrates that the total variableattenuation level may be remarkably consistent and linear in dBthroughout a wide bandwidth.

The attenuation circuits and cascade of attenuation circuits describedin the Figures above may also be utilized in temperature compensationattenuators having less distortion and a relatively high bandwidth. Forexample, FIG. 25 is a circuit diagram of a temperature compensatingattenuator 720 having an attenuation circuit 722, a control circuit 724,and a temperature compensation circuit 726. The attenuation circuit 722has an input terminal 728 for receiving an input signal 730. Theattenuation circuit 722 attenuates the input signal 730 to generate anattenuated output signal 732 that is output from an output terminal 734.To attenuate the input signal 730, the attenuation circuit 722 includesa first series connected attenuation circuit segment 736, a secondseries connected attenuation circuit segment 738, and a shunt connectedattenuation circuit segment 740.

The first series connected attenuation circuit segment 736, the secondseries connected attenuation circuit segment 738, and the shuntconnected attenuation circuit segment 740 may each have a first, second,and third plurality of stacked transistors 742, 744, 746, respectively.The transistors in each of the first, second, and third plurality ofstacked transistors 742, 744, 746 may be any type of transistors. InFIG. 25, the transistors in each of the first, second, and thirdplurality of stacked transistors 742, 744, 746 are heterostructure FETs(HFETs) or metal semiconductor FETs (MESFETs). Also, in this embodiment,the first series connected attenuation circuit segment 736, the secondseries connected attenuation circuit segment 738, and the shuntconnected attenuation circuit segment 740 each include first, second,and third resistive circuit 748, 750, 752, respectively, and first,second, and third biasing circuitry 754, 756, 758, respectively, thathelp reduce distortion in the attenuation circuit 722.

In this embodiment, the temperature compensation circuit 726 adjusts anattenuation control signal 760, which in this example is a controlvoltage, V_control. The control circuit 724 receives the controlvoltage, V_control, and is operable to generate a first series segmentcontrol signal 762, a second series segment control signal 764, and ashunt segment control signal 766. To adjust the control voltage,V_control, the temperature compensation circuit 726 includes anoperating temperature circuit 768 and a reference circuit 770. Theoperating temperature circuit 768 generates an operating temperaturesignal 772 having a signal level that is related to an operatingtemperature associated with the attenuation circuit 722. This may bedone utilizing various techniques. For example, the operatingtemperature circuit 768 may have a temperature sensitive component(s),such as a transistor, thermally associated with one or more of thetransistors in the first series connected attenuation circuit segment736, the second series connected attenuation circuit segment 738, and/orthe shunt connected attenuation circuit segment 740. The operatingtemperature circuit 768 could thus sense the operating temperature basedon the operation of the temperature sensitive component. In thealternative, the operating temperature circuit 768 may receive afeedback signal from the attenuation circuit 722 that varies inaccordance with the operating temperature. Also, the operatingtemperature circuit 768 may be time-based and may be configured togenerate the operating temperature signal 772 based on the thermalcharacteristics of the attenuation circuit 722 and the amount of timethat has passed since the attenuation circuit 722 began to operate.These and other embodiments of the operating temperature circuit 768that generate an operating temperature signal 772 having a signal levelthat is related to the operating temperature associated with theattenuation circuit 722 are within the scope of the disclosure. Theoperating temperature signal 772 may be scaled by components, such as aresistor(s), within the operating temperature circuit 768.

A reference circuit 770 is operable to generate a reference signal 774.The temperature compensation circuit 726 may include a comparator 776that generates a comparison signal 778 having a signal level related toa difference between the operating temperature signal 772 and thereference signal 774. The reference signal 774 may thus have a signallevel that is utilized by the comparator 776 to determine a change intemperature. The reference circuit 770 may simply be a DC voltage orcurrent source having a constant signal level selected so as torepresent a reference temperature. In the alternative, the referencecircuit 770 may have a temperature insensitive component that generatesa current or a voltage that is substantially constant over a desiredtemperature range. The reference circuit 770 may generate the referencesignal 774 based on the operation of the temperature insensitivecomponent. Also, the reference circuit 770 may receive a current or avoltage having a signal level that is substantially constant over adesired temperature range. In this manner, the reference circuit 770 cangenerate the reference signal 774 based on the signal level of thereceived current or voltage. Also, the reference circuit 770 may includea temperature sensitive component(s), such as a transistor, that isthermally associated with a device other than the attenuation circuit722. The reference circuit 770 could thus sense a reference temperaturethermally associated with device and generate the reference signal 774based on the operation of the temperature sensitive component(s). Theseand other embodiment of a reference circuit 770 operable to generate areference signal 774 are within the scope of the disclosure.

The comparison signal 778 is received by an amplifier 780 that providesa gain of the temperature compensation circuit 726. The amplifier 780amplifies the comparison signal 778 to generate an attenuation controladjustment signal 782 which in this example is a voltage output from thetemperature compensation circuit 726. In this embodiment, both thecontrol voltage, V_control and the temperature compensation circuit arereceived at an adding device 784. The adding device 784 adds theattenuation control adjustment signal 782 to the control voltage,V_control.

In this example, the control voltage, V_control, is from a constant DCsource 786 that outputs a DC voltage at a fixed nominal voltage level.The fixed nominal voltage level sets a total variable attenuation levelof the attenuation circuit 722 to a desired attenuation value when theoperating temperature is at a predetermined temperature value. Thus, thetemperature compensation circuit 726 illustrated in FIG. 25 is designedto maintain the total variable attenuation level of the attenuationcircuit 722 at the desired attenuation value as the temperature drifts.This is desirable since, as is known in the art, the operation of thetransistors in the first, second, and third plurality of stackedtransistors 742, 744, 746 may change as the operating temperature of thetransistors changes. If no difference is detected between the operatingtemperature signal 772 and the reference signal 774, then theattenuation control adjustment signal 726 does not adjust the voltagelevel of the control voltage, V_control. On the other hand, if adifference is detected between the operating temperature signal 772 andthe reference signal 774, then the attenuation control adjustment signal726 adjust the voltage level of the control voltage, V_control, tomaintain the attenuation circuit 722 operating at the desiredattenuation value.

Since the control voltage, V_control, is received having a fixed voltagelevel, the temperature compensation circuit 726 is designed to maintaineach of the first series connected attenuation circuit segment 736, thesecond series connected attenuation circuit segment 738, and the shuntconnected attenuation circuit segment 740 at a constant impedance levelso that the variable attenuation level of the attenuation circuit 722 iskept at the desired attenuation value. To do this, the control circuit724 is operable to generate the first series segment control signal 762,the second series segment control signal, 764, and the shunt segmentcontrol signal 766 in accordance with the voltage level of the controlvoltage, V_control, after adjustment by the attenuation controladjustment signal 782.

The control circuit 724 is operably associated with each of the first,second, and third plurality of stacked transistors 742, 744, 746. Thefirst series segment control signal 762 controls the operation of thefirst plurality of stacked transistors 742. Similarly, the second seriessegment control signal 764 controls the operation of the secondplurality of stacked transistors 744 and the shunt segment controlsignal 766 controls the operation of the third plurality of stackedtransistors 746. By adjusting the voltage level of the control voltage,V_control, the temperature compensation circuit 726 also adjust a signallevel of the control signals 762, 764, 766 to maintain the first seriesconnected attenuation circuit segment 736 operating at its constantimpedance level, the second series connected attenuation circuit segment738 operating at its constant impedance level, and the shunt connectedattenuation circuit segment 740 operating at its constant impedancelevel thereby keeping the attenuation circuit 722 operating at thedesired attenuation value. The attenuation control adjustment signal 726thus adjust the control voltage, V_control, from its nominal value setby the constant DC source 786 based on the operating temperatureassociated with the attenuation circuit 722.

FIG. 26 is a circuit diagram of yet another embodiment of an attenuator788 having an attenuation circuit 790, a control circuit 792, and atemperature compensation circuit 794. In this embodiment, theattenuation circuit 790 is in a Pi-type configuration. The attenuationcircuit 790 has an input terminal 796 for receiving an input signal 798.The attenuation circuit 790 attenuates the input signal 798 to generatean attenuated output signal 800 that is output from an output terminal802. To attenuate the input signal 798, the attenuation circuit 790includes a first shunt connected attenuation circuit segment 804, asecond shunt connected attenuation circuit segment 806, and a seriesconnected attenuation circuit segment 808.

The first shunt connected attenuation circuit segment 804, the secondshunt connected attenuation circuit segment 806, and the seriesconnected attenuation circuit segment 808 may each have a first, second,and third plurality of stacked transistors 810, 812, 814, respectively.The transistors in each of the first, second, and third plurality ofstacked transistors, 810, 812, 814 may be any type of transistors. InFIG. 26, the transistors in each of the first, second, and thirdplurality of stacked transistors 810, 812, 814 are HFETs or MESFETs.Also, in this embodiment, the first shunt connected attenuation circuitsegment 804, the second shunt connected attenuation circuit segment 806,and the series connected attenuation circuit segment 808 each include afirst, second, and third resistive circuit 816, 818, 820, respectively,that help reduce distortion in the attenuation circuit 790.

In this embodiment, the temperature compensation circuit 794 generatesan attenuation control adjustment signal 822, which adjusts the controlvoltage, V_control. The control circuit 792 receives the controlvoltage, V_control, and is operable to generate a shunt segment controlsignal 826 and a series segment control signal 828. To adjust thecontrol voltage, V_control, the temperature compensation circuit 794includes an operating temperature circuit 830 and a reference circuit832. The operating temperature circuit 830 generates an operatingtemperature signal 831 having a signal level that is related to anoperating temperature associated with the attenuation circuit 790. Theoperating temperature signal 831 may be scaled by components, such as aresistor(s), within the operating temperature circuit 830.

The reference circuit 832 is operable to generate a reference signal833. The temperature compensation circuit 794 may include a comparator834 that generates a comparison signal 836 having a signal level relatedto a difference between the operating temperature signal 831 and thereference signal 833. The reference signal 833 may thus have a signallevel that is utilized by the comparator 834 to determine a change intemperature.

The comparison signal 836 is received by an amplifier 838 that providesa gain of the temperature compensation circuit 794. The amplifier 838amplifies the comparison signal 836 to generate the attenuation controladjustment signal 822. In this embodiment, an adding device 840 receivesthe attenuation control adjustment signal 822 and a control voltage,V_control that may be generated at a fixed voltage level by constantvoltage source 842. The adding device 840 adds the attenuation controladjustment signal 822 to the control voltage, V_control to adjust thecontrol voltage, V_control.

The temperature compensation circuit 794 illustrated in FIG. 26 is alsodesigned to maintain the variable attenuation level of the attenuationcircuit 790 at the desired attenuation value if the temperature drifts.This is desirable since, as is known in the art, the operation of thetransistors in the first, second, and third plurality of stackedtransistors 810, 812, 814 may change as the operating temperature of thetransistors changes. If no difference is detected between the operatingtemperature signal 831 and the reference signal 833, then theattenuation control adjustment signal 822 does not adjust the voltagelevel of the control voltage, V_control. On the other hand, if adifference is detected between the operating temperature signal 831 andthe reference signal 833, then the attenuation control adjustment signal822 adjust the voltage level of the control voltage, V_control, tomaintain the attenuation circuit 790 operating at the desiredattenuation value.

Since the control voltage is input at a fixed voltage level, thetemperature compensation circuit 794 is designed to maintain each of thefirst shunt connected attenuation circuit segment 804, the second shuntconnected attenuation circuit segment 806, and the series connectedattenuation circuit segment 808 at a constant impedance level so thatthe variable level of the attenuation circuit 790 is kept at the desiredattenuation value. To do this, the control circuit 792 is operable togenerate the shunt segment control signal 826 and the series segmentcontrol signal 828 in accordance with the control voltage, V_controlafter adjustment by the attenuation control adjustment signal 822.

The control circuit 792 may be operably associated with each of thefirst, second, and third plurality of stacked transistors 810, 812, 814to set each of the first shunt connected attenuation circuit segment804, the second shunt connected attenuation circuit segment 806, and theseries connected attenuation circuit segment 808 to their respectiveconstant impedance levels. The shunt segment control signal 826 controlsthe operation of the first plurality of stacked transistors 810 and thesecond plurality of stacked transistors 812 coupled in the first andsecond shunt connected attenuation circuit segments 804, 806. Similarly,the series segment control signal 828 controls the operation of theseries connected attenuation circuit segment 808. By adjusting thevoltage level of the control voltage, V_control, the temperaturecompensation circuit 794 also adjust a signal level of the controlsignals 826, 828 in accordance with the difference between the operatingtemperature signal 831 and reference signal 833 to maintain the firstshunt connected attenuation circuit segment 804 operating at itsconstant impedance level, the second shunt connected attenuation circuitsegment 806 operating at its constant impedance level, and the seriesconnected attenuation circuit segment 808 operating at its constantimpedance level thereby keeping the attenuation circuit 790 operating atthe desired attenuation value. The attenuation control adjustment signal822 thus adjust the control voltage, V_control, from its nominal valueset by the constant DC source 786 based on the operating temperatureassociated with the attenuation circuit 722.

FIG. 27 illustrates yet another embodiment of an attenuator 844 having afirst attenuation circuit 846 in a Tee-type configuration, a secondattenuation circuit 848 in a Pi-type configuration, a control circuit850, and a temperature control circuit 852. The first attenuationcircuit 846 and second attenuation circuit 848 are similar to thecascaded attenuation circuits 614, 616 described in FIG. 21. Eachattenuation circuit 846, 848 is coupled between an input terminal 854and an output terminal 856 to attenuate an input signal 858 and generatean attenuated output signal 860. The first attenuation circuit 846includes a first series connected attenuation circuit segment 862, asecond series connected attenuation circuit segment 864, and a firstshunt connected attenuation circuit segment 866. The second attenuationcircuit 848 includes a second shunt connected attenuation circuitsegment 868, a third shunt connected attenuation circuit segment 870,and a third series connected attenuation circuit segment 872. Eachattenuation circuit segment 862, 864, 866, 868, 870, 872 has a pluralityof stacked transistors that are coupled in the attenuation circuitsegment 862, 864, 866, 868, 870, 872 to provide a variable impedancelevel having a continuous impedance range.

To control the variable impedance levels of each of the attenuationcircuit segments 862, 864, 866, 868, 870, 872, the attenuator 844 hasthe control circuit 850. A total variable attenuation level of theattenuator 844 is based on variable attenuation levels of the firstattenuation circuit 846 and second attenuation circuit 848 at theirinputs and outputs, which are each based on the variable impedancelevels of the attenuation circuit segments 862, 864, 866, 868, 870, 872.The control circuit 850 includes a first control device 874, a secondcontrol device 876, and a third control device 878. The first controldevice 874 is adapted to receive a control voltage, V_control, thatcontrols the total variable attenuation level of the attenuator 844. Inthis embodiment, a voltage level of the control voltage, V_control, canbe varied within a continuous voltage range of 0-5V. As described abovefor the control circuit 638 of attenuator 612 in FIG. 21, the firstcontrol device 874 generates a first attenuation circuit control signal880 based on the control voltage, V_control, that is utilized to controlthe variable attenuation level of the first attenuation circuit 846. Thefirst attenuation control signal 880 may be a control voltage,Vcontrol_A having a continuous voltage range. The first control device874 also generates a second attenuation circuit control signal 882 basedon the control voltage, V_control, that is utilized to control thevariable attenuation level of the second attenuation circuit 848. Thesecond attenuation circuit control signal 882 may be a control voltage,Vcontrol_B having a continuous voltage range. The transfer function ofthe illustrated first control device 874 is configured to generate thecontrol voltages, Vcontrol_A, Vcontrol_B, at the appropriate voltagelevels based on the voltage level of the control voltage, V_control.

Next, the control voltage, Vcontrol_A, is received by the second controldevice 876. Based on the voltage level of the control voltage,Vcontrol_A, the second control device 876 generates a first seriessegment control signal 884 and a first shunt segment control signal 886.The first series segment control signal 884 is received to control theoperation of the plurality of stacked transistors in each of the firstand second series connected attenuation circuit segments 862, 864 in thefirst attenuation circuit 846. The first shunt segment control signal886 controls the operation of the plurality of stacked transistors inthe first shunt connected attenuation circuit segment 866. In thismanner, the second control device 876 can control the variableattenuation level of the first attenuation circuit 846. Similarly, thecontrol voltage, Vcontrol_B is received by the third control device 878.Based on the voltage level of the control voltage, Vcontrol_B, the thirdcontrol device 878 generates a second shunt segment control signal 888and a second series segment control signal 890. The second shunt segmentcontrol signal 888 is received to control the operation of the pluralityof stacked transistors in each of the second and third shunt connectedattenuation circuit segments 868, 870 in the second attenuation circuit848. The second series segment control signal 890 controls the operationof the plurality of stacked transistors in the third series connectedattenuation circuit segment 872. By controlling the variable attenuationlevel of both of the attenuation circuits 846, 848 the control circuit850 can control the total variable attenuation level of the attenuator844 based on the voltage level of the control voltage, V_control.

In this embodiment, the temperature compensation circuit 852 is operableto generate an attenuation control adjustment signal 892 that adjust thecontrol voltage, V_control, based on an operating temperature associatedwith the first and/or second attenuation circuits 846, 848. To generatethe attenuation control adjustment signal 892, the temperaturecompensation circuit 852 includes an operating temperature circuit 894and a reference circuit 896. The operating temperature circuit 894generates an operating temperature signal 898 having a signal level thatis related to an operating temperature associated with the first and/orsecond attenuation circuit 846, 848. This may be done utilizing varioustechniques. For example, the operating temperature circuit 894 may havea temperature sensitive component(s), such as a transistor, thermallyassociated with one or more of the transistors in the attenuationcircuit segments 862, 864, 866, 868, 870, 872. The operating temperaturecircuit 894 could thus sense the operating temperature based on theoperation of the temperature sensitive component. In the alternative,the operating temperature circuit 894 may receive a feedback signal fromthe first and/or second attenuation circuit 846, 848 that varies inaccordance with the operating temperature. Also, the operatingtemperature circuit 894 may be time-based and may be configured togenerate the operating temperature signal 898 based on the thermalcharacteristics of the first and/or second attenuation circuit 846, 848and the amount of time that has passed since the first and/or secondattenuation circuit 846, 848 began to operate. These and otherembodiments of the operating temperature circuit 894 that generate anoperating temperature signal 898 having the signal level that is relatedto the operating temperature associated with the first and/or secondattenuation circuit 846, 848 are within the scope of the disclosure. Theoperating temperature signal 898 may be scaled by components, such as aresistor(s), within the operating temperature circuit 894.

The reference circuit 896 is operable to generate a reference signal900. The temperature compensation circuit 852 may include a comparator902 that generates a comparison signal 904 having a signal level relatedto a difference between the operating temperature signal 898 and thereference signal 900. The reference signal 900 may thus have a signallevel that is utilized by the comparator 902 to determine a change intemperature. The reference circuit 896 may simply be a DC voltage orcurrent source having a constant signal level selected so as torepresent a reference temperature. In the alternative, the referencecircuit 896 may have a temperature insensitive component that generatesa current or a voltage that is substantially constant over a desiredtemperature range. The reference circuit 896 may generate the referencesignal 900 based on the operation of the temperature insensitivecomponent. Also, the reference circuit 896 may receive a current or avoltage having a signal level that is substantially constant over adesired temperature range. In this manner, the reference circuit 896 cangenerate the reference signal 900 based on the signal level of thereceived current or voltage. Also, the reference circuit 896 may includea temperature sensitive component(s), such as a transistor, that isthermally associated with a device other than the first and/or secondattenuation circuit 846, 848. The reference circuit 896 could thus sensea reference temperature thermally associated with the device andgenerate the reference signal 900 based on the operation of thetemperature sensitive component(s). These and other embodiments of areference circuit 896 operable to generate a reference signal 900 arewithin the scope of the disclosure.

The comparison signal 904 is received by an amplifier 906 that providesa gain of the temperature compensation circuit 852. The amplifier 906amplifies the comparison signal 904 to generate the attenuation controladjustment signal 892, which is output from the temperature compensationcircuit 852. In this embodiment, an adding device 908 is providedbetween the control circuit 850 and the temperature compensation circuit852. The adding device 908 receives the control voltage, V_control, andadjusts the voltage level of the control voltage, V_control, inaccordance with the signal level of the attenuation control adjustmentsignal 892. In this manner, the temperature compensation circuit 852reduces changes in the total variable attenuation level of theattenuator 844 due to variations in the operating temperature.

FIG. 28 illustrates an additional embodiment of an attenuator 910. Theattenuator 910 has the same first and second attenuation circuits 846,848 and the control circuit 850 described above in FIG. 27. However, inthis embodiment, the attenuator 910 includes a first, second, third, andfourth temperature compensation circuit 912, 914, 916, 918. The firsttemperature compensation circuit 912 generates a first attenuationcontrol adjustment signal 920 that adjusts the first series segmentcontrol signal 884 based on an operating temperature associated with thefirst and/or second series connected attenuation circuit segments 862,864. The second temperature compensation circuit 914 generates a secondattenuation control adjustment signal 922 that adjusts the first shuntsegment control signal 886 based on an operating temperature associatedwith the first shunt connected attenuation circuit segments 866. Thethird temperature compensation circuit 916 generates a third attenuationcontrol adjustment signal 924 that adjusts the second shunt segmentcontrol signal 888 based on an operating temperature associated with thesecond and/or third shunt connected attenuation circuit segments 868,870. Finally, the fourth temperature compensation circuit 918 generatesa fourth attenuation control adjustment signal 926 that adjust thesecond series segment control signal 890 based on an operatingtemperature associated with the third series connected attenuationcircuit segment 872. In the illustrated embodiment, the segment controlsignals 884, 886, 888, 890 are adjusted in accordance with theattenuation control adjustment signals 920, 922, 924, 926 by adders 928,930, 932, 934, respectively.

FIG. 29 is an illustration of the first temperature compensation circuit912. To generate the first attenuation control adjustment signal 920,the first temperature compensation circuit 912 includes a firstoperating temperature circuit 936 and a first reference circuit 938. Thefirst operating temperature circuit 936 generates a first operatingtemperature signal 940 having a signal level that is related to anoperating temperature associated with the first and/or second seriesconnected attenuation circuit segments 862, 864 (shown in FIG. 28). Thefirst operating temperature signal 940 may be scaled by components, suchas a resistor(s), within the first operating temperature circuit 936.

The first reference circuit 938 is operable to generate a firstreference signal 942. The first temperature compensation circuit 912 mayinclude a first comparator 944 that generates a first comparison signal946 having a signal level related to a difference between the firstoperating temperature signal 940 and the first reference signal 942. Thefirst reference signal 942 may thus have a signal level that is utilizedby the comparator 944 to determine a change in temperature. The firstcomparison signal 946 is received by a first amplifier 948 that providesa gain of the first temperature compensation circuit 912. The firstamplifier 948 amplifies the first comparison signal 946 to generate thefirst attenuation control adjustment signal 920, which is output fromthe first temperature compensation circuit 912. In this manner, thefirst temperature compensation circuit 912 reduces changes in a firstvariable impedance level of the first series connected attenuationcircuit segment 862 (shown in FIG. 28) and a second variable impedancelevel of the second series connected attenuation circuit segment 864(shown in FIG. 28) due to variations in the operating temperature.

FIG. 30 is an illustration of the second temperature compensationcircuit 914. To generate the second attenuation control adjustmentsignal 922, the second temperature compensation circuit 914 includes asecond operating temperature circuit 950 and a second reference circuit952. The second operating temperature circuit 950 generates a secondoperating temperature signal 954 having a signal level that is relatedto an operating temperature associated with the first shunt connectedattenuation circuit segment 866 (shown in FIG. 28). The second operatingtemperature signal 954 may be scaled by components, such as aresistor(s), within the second operating temperature circuit 950.

The second reference circuit 952 is operable to generate a secondreference signal 956. The second temperature compensation circuit 914may include a second comparator 958 that generates a second comparisonsignal 960 having a signal level related to a difference between thesecond operating temperature signal 954 and the second reference signal956. The second reference signal 956 may thus have a signal level thatis utilized by the comparator 958 to determine a change in temperature.The second comparison signal 960 is received by a second amplifier 962that provides a gain of the second temperature compensation circuit 914.The second amplifier 962 amplifies the second comparison signal 960 togenerate the second attenuation control adjustment signal 922, which isoutput from the second temperature compensation circuit 914. In thismanner, the second temperature compensation circuit 914 reduces changesin a second variable impedance level of the first shunt connectedattenuation circuit segment 866 (shown in FIG. 28) due to variations inthe operating temperature.

FIG. 31 is an illustration of the third temperature compensation circuit916. To generate the third attenuation control adjustment signal 924,the third temperature compensation circuit 916 includes a thirdoperating temperature circuit 964 and a third reference circuit 966. Thethird operating temperature circuit 964 generates a third operatingtemperature signal 968 having a signal level that is related to anoperating temperature associated with the second and/or third shuntconnected attenuation circuit segments 868, 870 (shown in FIG. 28). Thethird operating temperature signal 968 may be scaled by components, suchas a resistor(s), within the third operating temperature circuit 964.

The third reference circuit 966 is operable to generate a thirdreference signal 970. The third temperature compensation circuit 916 mayinclude a third comparator 972 that generates a third comparison signal974 having a signal level related to a difference between the thirdoperating temperature signal 968 and the third reference signal 970. Thethird reference signal 970 may thus have a signal level that is utilizedby the third comparator 972 to determine a change in temperature. Thethird comparison signal 974 is received by a third amplifier 976 thatprovides a gain of the third temperature compensation circuit 916. Thethird amplifier 976 amplifies the third comparison signal 974 togenerate the third attenuation control adjustment signal 924, which isoutput from the third temperature compensation circuit 916. In thismanner, the third temperature compensation circuit 916 reduces changesin a fourth variable impedance level of the second shunt connectedattenuation circuit segment 868 (shown in FIG. 28) and a fifth variableimpedance level of the third shunt connected attenuation circuit segment870 (shown in FIG. 28) due to variations in the operating temperature.

FIG. 32 is an illustration of the fourth temperature compensationcircuit 918. To generate the fourth attenuation control adjustmentsignal 926, the fourth temperature compensation circuit 918 includes afourth operating temperature circuit 978 and a fourth reference circuit980. The fourth operating temperature circuit 978 generates a fourthoperating temperature signal 982 having a signal level that is relatedto an operating temperature associated with the third series connectedattenuation circuit segment 872 (shown in FIG. 28). The fourth operatingtemperature signal 982 may be scaled by components, such as aresistor(s), within the fourth operating temperature circuit 978.

The fourth reference circuit 980 is operable to generate a fourthreference signal 984. The fourth temperature compensation circuit 918may include a fourth comparator 986 that generates a fourth comparisonsignal 988 having a signal level related to a difference between thefourth operating temperature signal 982 and the fourth reference signal984. The fourth reference signal 984 may thus have a signal level thatis utilized by the fourth comparator 986 to determine a change intemperature. The fourth comparison signal 988 is received by a fourthamplifier 990 that provides a gain of the fourth temperaturecompensation circuit 918. The fourth amplifier 990 amplifies the fourthcomparison signal 988 to generate the fourth attenuation controladjustment signal 926, which is output from the fourth temperaturecompensation circuit 918. In this manner, the fourth temperaturecompensation circuit 918 reduces changes in the sixth variable impedancelevel of the third shunt connected attenuation circuit segment 872(shown in FIG. 28) due to variations in the operating temperature.

The temperature compensation circuits and techniques described above forFIGS. 25-32 above may be utilized with the attenuators described inFIGS. 1, 3, 6-13, and 15-22 to provide temperature compensation and/orto create temperature compensation attenuators.

For example, FIG. 33 is a graph illustrating the temperature performanceof the cascaded first and second attenuation circuits 660, 661 describedabove in the circuit diagram of FIG. 22, controlled by the controlcircuit 850 and the temperature compensation circuit 852 described inFIG. 27. The graph plots the change in the total variable attenuationlevel of the cascaded first and second attenuation circuits 660, 661from a reference operating temperature of 25° C. versus the voltagelevel of the control voltage, V_control. The first line 992 is thesimulated change in the total variable attenuation level when theoperating temperature associated with the first and second attenuationcircuits 660, 661 rises to 30° C. The second line 994 is the measuredchange in the total variable attenuation level when the operatingtemperature associated with the first and second attenuation circuitsrises to 30° C. The third line 996 is the simulated change in the totalvariable attenuation level when the operating temperature associatedwith the first and second attenuation circuits 660, 661 rises to 85° C.Finally, the fourth line 998 is the measured change in the totalvariable attenuation level when the operating temperature associatedwith the first and second attenuation circuits 660, 661 rises to 85° C.As illustrated, the maximum change in the total variable attenuationlevel is less than +/−2 dB and the temperature performance is consistentwith simulations.

FIG. 34 is a graph illustrating the IIP3 of the cascaded first andsecond attenuation circuits 660, 661 described above in the circuitdiagram of FIG. 22 versus the total variable attenuation level atdifferent temperatures, when the first and second attenuation circuits660, 661 are controlled by the control circuit 850 and the temperaturecompensation circuit 852 described in FIG. 27. The first line 1000 isthe IIP3 at 25° C. The second line 1002 is the IIP3 at 30° C. The thirdline 1004 is the IIP3 at 85° C. As illustrated, the linearity of thetotal variable attenuation level is maintained relatively consistentdespite changes in temperature.

Referring now to FIG. 35, one embodiment of an integrated circuit layoutfor providing an attenuator 1006 in accordance with this disclosure isshown which may be utilized in a radio frequency (RF) circuit (notshown). The attenuator 1006 may be built on a 3×3 mm, 16 pin, Quad FlatNo Leads (QFN) Package, such as QFN Package having part number RFCA2013.The attenuator 1006 has a first attenuation circuit 1008, a secondattenuation circuit 1010, a control circuit 1012, an RF input terminal1014, an RF ground terminal 1016, and an RF output terminal 1018 builton a single substrate 1020, which in this example is a 1.55 mm×1 mm diehaving part number IBM CS07RF. A temperature compensation circuit mayalso be provided on the substrate 1020. The pins 1022 couple theattenuator 1006 to the remainder of the RF circuit.

Referring now to FIG. 36, another embodiment of an integrated circuitlayout for an attenuation circuit 1024 having a Tee-type configurationis shown. The attenuation circuit 1024 is provided on a 5 mm×5 mm QFNpackage. The attenuation circuit 1024 has a first series connectedattenuation circuit segment 1026, a second series connected attenuationcircuit segment 1028, and a shunt connected attenuation circuit segment1030. Each attenuation circuit segment 1026, 1028, 1030 has a stack offourteen MOSFETs. In this embodiment, all of the MOSFETs built on aseparate silicon-on-insulator type substrate.

The first series connected attenuation circuit segment 1026 has an inputterminal 1032 coupled to a pin 1034 for receiving an RF input signal.The first series connected attenuation circuit 1026 also includes afirst control input terminal 1036 for receiving a control voltage,V_bias1, to control the stack of transistors within the first seriesconnected attenuation circuit segment 1026. The second series connectedattenuation circuit segment 1028 has an output terminal 1038 coupled toa pin 1040 for outputting an attenuated RF output signal. Each of thefirst and second series connected attenuation circuit segments 1026,1028 have a connection terminal 1042, 1044 coupled in series by pin1046. The second series connected attenuation circuit segment 1028 alsoincludes a second control input terminal 1048 for receiving a controlvoltage, V_bias2, that controls the stack of MOSFETs within the secondseries connected attenuation circuit segment 1028. The shunt connectedattenuation circuit segment 1030 has a connection terminal 1050 coupledin shunt to the connection terminal 1044 of the second series connectedattenuation circuit segment 1028. The shunt connected attenuationcircuit segment 1030 also includes a third control input terminal 1052coupled to pin 1054 for receiving a control voltage, V_bias3, to controlthe stack of MOSFETs within the shunt connected attenuation circuitsegment 1030. Each of the attenuation circuit segments 1026, 1028, 1030also include V_ground terminals 1056, 1058, 1060 that are coupled topins 1062, 1064, 1066 to connect the attenuation circuit segments 1026,1028, 1030 to V_ground terminals.

Referring now to FIG. 37, another embodiment of an integrated circuitlayout for an attenuation circuit 1068 in a Pi-type configuration isshown. The attenuation circuit 1068 is provided on a 5 mm×5 mm QFNpackage. The attenuation circuit 1068 has a first shunt connectedattenuation circuit segment 1070, a second shunt connected attenuationcircuit segment 1072, and a series connected attenuation circuit segment1074. Each attenuation circuit segment 1070, 1072, 1074 has a stack offourteen MOSFETs. In this embodiment, all of the MOSFETs and eachattenuation circuit segment 1070, 1072, 1074, are built on a separatesilicon-on-insulator type substrate. The first shunt connectedattenuation circuit segment 1070 has an input terminal 1076 coupled to apin 1078 for receiving an RF input signal. The first shunt connectedattenuation circuit segment 1070 also includes a first control inputterminal 1080 for receiving a control voltage, V_bias1, to providecontrol the stack of MOSFETs within the first shunt connectedattenuation circuit segment 1070. The second shunt connected attenuationcircuit segment 1072 has a connection terminal 1082 coupled to a pin1084 that connects to an output terminal 1086 in the series connectedattenuation circuit segment 1074. The second shunt connected attenuationcircuit segment 1072 also includes a second control input terminal 1088for receiving the control voltage, V_bias1, to control the stack ofMOSFETS within the second shunt connected attenuation circuit segment1072. The series connected attenuation circuit segment 1074 has an inputterminal 1090 coupled to pin 1092 for receiving the RF input signal. Theseries connected attenuation circuit 1074 also has the output terminal1086 coupled to a pin 1094 for outputting an attenuated RF outputsignal. Furthermore, the series connected attenuation circuit segment1074 has a third control input terminal 1096 coupled to a pin 1098 forreceiving a control voltage, V_bias2, to control the stack of MOSFETSwithin the series connected attenuation circuit segment 1074. Each ofthe attenuation circuit segments 1070, 1072, 1074 also include V_groundterminals 1100, 1102, 1104 that are coupled to pins 1106, 1108, 1110 toconnect the attenuation circuit segments 1070, 1072, 1074 to V_ground.

FIG. 38 is a circuit diagram of a temperature controlled attenuator 1112having an attenuation circuit 1114, a control circuit 1116, and atemperature controlled circuit 1118. The attenuation circuit 1114 has aninput terminal 1120 for receiving an input signal 1122. The attenuationcircuit 1114 attenuates the input signal 1122 to generate an attenuatedoutput signal 1124 that is output from an output terminal 1126. Toattenuate the input signal 1122, the attenuation circuit 1114 includes afirst series connected attenuation circuit segment 1128, a second seriesconnected attenuation circuit segment 1130, and a shunt connectedattenuation circuit segment 1132.

The first series connected attenuation circuit segment 1128, the secondseries connected attenuation circuit segment 1130, and the shuntconnected attenuation circuit segment 1132 may each have a first,second, and third plurality of stacked transistors 1134, 1136, 1138,respectively. The transistors in each of the first, second, and thirdplurality of stacked transistors 1134, 1136, 1138 may be any type oftransistors. In FIG. 38, the transistors in each of the first, second,and third plurality of stacked transistors 1134, 1136, 1138 are HFETs orMESFETs. Also, in this embodiment, the first series connectedattenuation circuit segment 1128, the second series connectedattenuation circuit segment 1130, and the shunt connected attenuationcircuit segment 1132 each include first, second, and third resistivecircuit 1140, 1142, 1144, respectively, and first, second, and thirdbiasing circuitry 1146, 1148, 1150, respectively, that help reducedistortion in the attenuation circuit 1114.

In this embodiment, the temperature controlled circuit 1118 generates anattenuation control signal 1152, which in this example is a controlvoltage, V_control. The control circuit 1116 receives the controlvoltage, V_control, and is operable to generate a first series segmentcontrol signal 1154, a second series segment control signal 1156, and ashunt segment control signal 1158. To adjust the control voltage,V_control, the temperature controlled circuit 1118 includes an operatingtemperature circuit 1160 and a reference circuit 1162. The operatingtemperature circuit 1160 generates an operating temperature signal 1164having a signal level that is related to an operating temperatureassociated an external electronic component or the attenuation circuit1112. This may be done utilizing various techniques. For example, theoperating temperature circuit 1160 may have a temperature sensitivecomponent(s), such as a transistor, thermally associated with one ormore of the transistors the external component or the attenuationcircuit 1114. The operating temperature circuit 1160 could thus sensethe operating temperature based on the operation of the temperaturesensitive component. In the alternative, the operating temperaturecircuit 1160 may receive a feedback signal the external component orfrom the attenuation circuit 1114 that varies in accordance with theoperating temperature. Also, the operating temperature circuit 1160 maybe time-based and may be configured to generate the operatingtemperature signal 1164 based on the thermal characteristics of theexternal component or the attenuation circuit 1114 and the amount oftime that has passed since external component or the attenuation circuit1114 began to operate. These and other embodiments of the operatingtemperature circuit 1160 that generate an operating temperature signal1164 having a signal level that is related to the operating temperatureof the attenuation circuit 1114 or the external component are within thescope of the disclosure. The operating temperature signal 1164 may bescaled by components, such as a resistor(s), within the operatingtemperature circuit 1160.

The external component is not shown here but may be any type ofelectronic device or circuit. For example, the temperature controlledattenuator 1112 may be utilized in the front end of an RF transceiver ora transmitter chain to compensate for gain variation in amplifiers. Theelectronic component may be an amplifier in the RF transceiver whosegain varies in accordance to temperature. By utilizing the temperaturecontrolled attenuator 1112, the attenuation of the attenuation circuit1114 can be varied in accordance to the operating temperature. If theoperating temperature of the external component is sufficiently relatedto the operating temperature of the attenuation circuit 1114 then theoperating temperature circuit 1160 can detect a temperature of theattenuation circuit 1114 to vary attenuation. Otherwise, the operatingtemperature circuit 1160 may detect an operating temperature of theexternal component.

A reference circuit 1162 is operable to generate a reference signal1166. The temperature controlled circuit 1118 may include a comparator1168 that generates a comparison signal 1170 having a signal levelrelated to a difference between the operating temperature signal 1164and the reference signal 1166. The reference signal 1166 may thus have asignal level that is utilized by the comparator 1168 to determine achange in temperature. The reference circuit 1162 may simply be a DCvoltage or current source having a constant signal level selected so asto represent a reference temperature. In the alternative, the referencecircuit 1162 may have a temperature insensitive component that generatesa current or a voltage that is substantially constant over a desiredtemperature range. The reference circuit 1162 may generate the referencesignal 1166 based on the operation of the temperature insensitivecomponent. Also, the reference circuit 1162 may receive a current or avoltage having a signal level that is substantially constant over adesired temperature range. In this manner, the reference circuit 1162can generate the reference signal 1166 based on the signal level of thereceived current or voltage. Also, the reference circuit 1162 mayinclude a temperature sensitive component(s), such as a transistor, thatis thermally associated with a device other than the external component.The reference circuit 1162 could thus sense a reference temperaturethermally associated with the attenuation circuit 1114. These and otherembodiments of a reference circuit 1162 operable to generate a referencesignal 1166 are within the scope of the disclosure.

The comparison signal 1170 is received by an amplifier 1172 thatprovides a gain of the temperature controlled circuit 1118. The gain ofthe amplifier 1172 is set based on a temperature coefficient of theexternal component. Thus, the amplifier 1172 amplifies the comparisonsignal 1170 to generate an attenuation control adjustment signal 1174.In this embodiment, the temperature controlled circuit 1118 receives aquiescent control signal 1176 having a quiescent signal level fordefining a quiescent attenuation level within the continuous attenuationrange of the first variable attenuation level at the referencetemperature. The quiescent control signal 1176 may simply be set by a DCvoltage source 1178 selected to have the appropriate quiescentattenuation level. The quiescent control signal 1176 is received at anadjustment device 1180, such as an adder. The adjustment device 1180adds the attenuation control adjustment signal 1174 to the controlvoltage, V_control. Thus, the temperature controlled circuit 1118illustrated in FIG. 25 is designed to adjust the variable attenuationlevel of the attenuation circuit 1114 as the temperature drifts in theexternal component and the variable attenuation level is thustemperature dependant. This is desirable since, as is known in the art,the operation of the external components may change as the operatingtemperature of the transistors changes. If no difference is detectedbetween the operating temperature signal 1164 and the reference signal1166, then the attenuation control adjustment signal 1118 does notadjust the quiescent control signal 1176 and the control voltage,V_control would simply have the signal level of the quiescent controlsignal 1176. On the other hand, if a difference is detected between theoperating temperature signal 1164 and the reference signal 1166, thenthe attenuation control adjustment signal 1118 adjust the voltage levelof the quiescent control signal 1176 to the appropriate voltage toprovide a desired attenuation value. Since the gain of the amplifier isbased on the temperature coefficient of the external component, thetemperature controlled attenuator 1112 can adjust the variableattenuation level to compensate for the operating variances of theexternal component.

Since the control voltage, V_control, is temperature dependant, thefirst series connected attenuation circuit segment 1128, the secondseries connected attenuation circuit segment 1130, and the shuntconnected attenuation circuit segment 1132 have variable impedance levelthat are also temperature dependant. The control circuit 1116 isoperable to generate the first series segment control signal 1154, thesecond series segment control signal, 1156, and the shunt segmentcontrol signal 1158 in accordance with the voltage level of the controlvoltage, V_control which is temperature dependant, for the reasonsexplained above. Accordingly, the variable attenuation level istemperature dependant as well.

The control circuit 1116 is operably associated with each of the first,second, and third plurality of stacked transistors 1134, 1136, 1138. Thefirst series segment control signal 1154 controls the operation of thefirst plurality of stacked transistors 1134. Similarly, the secondseries segment control signal 1156 controls the operation of the secondplurality of stacked transistors 1136 and the shunt segment controlsignal 1158 controls the operation of the third plurality of stackedtransistors 1138. By adjusting the voltage level of the control voltage,V_control, the temperature controlled circuit 1118 also adjust a signallevel of the control signals 1154, 1156, 1158 to maintain the firstseries connected attenuation circuit segment 1128 operating at theappropriate impedance level, the second series connected attenuationcircuit segment 1130 operating at the appropriate impedance level, andthe shunt connected attenuation circuit segment 1132 operating at theappropriate impedance level thereby allowing the attenuation circuit1114 to vary its operation to compensate for variances in the operationof the external component.

FIG. 39 is a circuit diagram of yet another embodiment of a temperaturecontrolled attenuator 1182 having an attenuation circuit 1184, a controlcircuit 1186, and a temperature controlled circuit 1188. In thisembodiment, the attenuation circuit 1184 is in a Pi-type configuration.The attenuation circuit 1184 has an input terminal 1190 for receiving aninput signal 1192. The attenuation circuit 1184 attenuates the inputsignal 1192 to generate an attenuated output signal 1194 that is outputfrom an output terminal 1196. To attenuate the input signal 1192, theattenuation circuit 1184 includes a first shunt connected attenuationcircuit segment 1198, a second shunt connected attenuation circuitsegment 1200, and a series connected attenuation circuit segment 1202.

The first shunt connected attenuation circuit segment 1198, the secondshunt connected attenuation circuit segment 1200, and the seriesconnected attenuation circuit segment 1202 may each have a first,second, and third plurality of stacked transistors 1204, 1206, 1208,respectively. The transistors in each of the first, second, and thirdplurality of stacked transistors, 1204, 1206, 1208 may be any type oftransistors. In FIG. 39, the transistors in each of the first, second,and third plurality of stacked transistors 1204, 1206, 1208 are HFETs orMESFETs. Also, in this embodiment, the first shunt connected attenuationcircuit segment 1198, the second shunt connected attenuation circuitsegment 1200, and the series connected attenuation circuit segment 1202each include a first, second, and third resistive circuit 1210, 1212,1214, respectively, that help reduce distortion in the attenuationcircuit 1184.

In this embodiment, the temperature controlled circuit 1188 generates anattenuation control adjustment signal 1216. This attenuation controladjustment signal 1216 adjust the quiescent operating signal 1218 togenerate the control voltage, V_control. The control circuit 1186receives the control voltage, V_control, and is operable to generate ashunt segment control signal 1218 and a series segment control signal1220. To generate the control voltage, V_control, the temperaturecontrolled circuit 1188 includes an operating temperature circuit 1222and a reference circuit 1224. The operating temperature circuit 1222generates an operating temperature signal 1226 having a signal levelthat is related to an operating temperature associated with theattenuation circuit 1184. The operating temperature signal 1226 may bescaled by components, such as a resistor(s), within the operatingtemperature circuit 1222.

The reference circuit 1224 is operable to generate a reference signal1228. The temperature controlled circuit 1188 may include a comparator1230 that generates a comparison signal 1232 having a signal levelrelated to a difference between the operating temperature signal 1226and the reference signal 1228. The reference signal 1228 may thus have asignal level that is utilized by the comparator 1230 to determine achange in temperature.

The comparison signal 1232 is received by an amplifier 1234 thatprovides a gain of the temperature controlled circuit 1188. This gain isset based on a temperature coefficient of an external component. Theamplifier 1234 amplifies the comparison signal 1232 to generate theattenuation control adjustment signal 1216. In this embodiment, anadjustment device 1236 receives the attenuation control adjustmentsignal 1216 and the quiescent operating signal 1218 from the DC source.The adjustment device 1236 adjusts the quiescent operating signal 1218to generate the control voltage, V_control.

The temperature controlled circuit 1188 illustrated in FIG. 39 istemperature dependant and is designed to adjust the variable attenuationlevel of the attenuation circuit 1184 to compensate for operationalchanges in an external component (not shown). For example, this may bean amplifier that is or is to be placed in operation with thetemperature controlled attenuator 1182. This is desirable since, as isknown in the art, the operation of external components may change as theoperating temperature of the transistors changes. If no difference isdetected between the operating temperature signal 1226 and the referencesignal 1228, then the attenuation control adjustment signal 1216 doesnot adjust the quiescent operating signal 1218 and the control voltage,V_control is generated as the quiescent operating signal 1218. On theother hand, if a difference is detected between the operatingtemperature signal 1226 and the reference signal 1228, then theattenuation control adjustment signal 1216 adjust the quiescentoperating signal 1238 to generate the control voltage, V_control.

The control circuit 1186 may be operably associated with each of thefirst, second, and third plurality of stacked transistors 1204, 1206,1208 to set each of the first shunt connected attenuation circuitsegment 1198, the second shunt connected attenuation circuit segment1200, and the series connected attenuation circuit segment 1202 to theirrespective impedance levels. The shunt segment control signal 1218controls the operation of the first plurality of stacked transistors1204 and the second plurality of stacked transistors 1206 coupled in thefirst and second shunt connected attenuation circuit segments 1198,1200. Similarly, the series segment control signal 1220 controls theoperation of the series connected attenuation circuit segment 1202. Bymaking the voltage level of the control voltage, V_control, temperaturedependant, the temperature controlled circuit 1188 also makes thecontrol signals 1218, 1220 temperature dependant. These techniquesdisclosed herein with regards to temperature controlled attenuators 1112and 1184 may be utilized with the other attenuators described for theFigures above to create temperature controlled attenuators that aretemperature dependant to compensate for operational changes in anexternal component.

Note that throughout this disclosure the term “continuous” is utilizedto describe signals and attenuation ranges. Theoretically, a perfectlycontinuous signal, impedance, or attenuation range has an infinitelyhigh resolution meaning that the signal level, impedance level orattenuation level can have any value, no matter how precise, within thesignal, impedance, or attenuation range. Also, perfectly continuoussignals, impedance, and attenuation ranges have no discontinuities andare completely continuous. The term “continuous” in this disclosureencompasses but is not limited to perfect continuity. In practice, thesignal ranges, impedance ranges, and attenuation ranges are often notperfectly continuous. Noise, distortion, the material properties of theelectronic components in the attenuator, as well as other factors,degrade the resolution and create discontinuities in signals andattenuation ranges. Also, a continuous signal and attenuation range maybe designed to have selected discontinuities at particular locations orwithin limited sections of the signal and attenuation ranges.

For example, in practice, a continuous signal, impedance, or attenuationrange may be designed to step from one continuous segment to anothercontinuous segment or hiccup to another value. These continuous signalsand attenuation ranges may be designed so as to avoid particularoperating points and segments within the signal range, impedance range,or attenuation ranges that produce excessive distortion due to theparticular characteristics of the electronic components in theattenuator. Consequently, in practice, continuous signals, impedance,and attenuation ranges may be imperfectly continuous since these signal,impedance and attenuation ranges do not have infinite resolution and/orare not completely continuous. While the term “continuous” is notutilized to describe signal and attenuation ranges made up mostly orentirely of discrete values, the term “continuous” in this disclosuredoes encompass imperfectly continuous signals and imperfectly continuousattenuation or impedance ranges, whether they are imperfectly continuousby design or due to factors that degrade resolution and/or continuity.Thus, the term “continuous” should be interpreted broadly in light ofthe practical characteristics, capabilities, and design of theelectronic components in the attenuators that provide the signals andattenuation ranges.

Those skilled in the art will recognize improvements and modificationsto the preferred embodiments of the present disclosure. All suchimprovements and modifications are considered within the scope of theconcepts disclosed herein and the claims that follow.

What is claimed is:
 1. A temperature compensating attenuator,comprising: a first attenuation circuit having a first attenuationlevel, the first attenuation circuit comprising: a first seriesconnected attenuation circuit segment having a first plurality ofstacked transistors; a first shunt connected attenuation circuit segmenthaving a second plurality of stacked transistors; a control circuitadapted to receive an attenuation control signal, the control circuitbeing coupled to the first plurality of stacked transistors and thesecond plurality of stacked transistors to control the first attenuationlevel of the first attenuation circuit based on a signal level of theattenuation control signal; and a temperature compensating circuitcomprising a first operating temperature circuit operable to generate afirst operating temperature signal having a signal level related to anoperating temperature associated with the first attenuation circuit, afirst reference circuit operable to generate a reference signal at areference level, and a comparator circuit adapted to receive the firstoperating temperature signal and the reference signal, the comparatorcircuit being operable to detect a difference between the signal levelof the first operating temperature signal and the reference level togenerate a comparison signal, wherein the temperature compensatingcircuit is operable to generate an attenuation control adjustment signalhaving a signal level related to a temperature change in the operatingtemperature from the comparison signal, the temperature compensatingcircuit being operably associated with the control circuit so that theattenuation control signal is adjustable based on the signal level ofthe attenuation control adjustment signal.
 2. The temperaturecompensating attenuator of claim 1, wherein the first attenuationcircuit is formed on one or more substrates, the one or more substratesbeing selected from a group consisting of a silicon-on-insulator typesubstrate and a silicon-on-sapphire type substrate.
 3. The temperaturecompensating attenuator of claim 1, wherein each of the first pluralityof stacked transistors and each of the second plurality of stackedtransistors is selected from a group consisting of a metal oxidesemiconductor field effect transistor, a metal semiconductor fieldeffect transistor, and a heterostructure field effect transistor.
 4. Thetemperature compensating attenuator of claim 1, further comprising: aconstant DC signal source that generates the attenuation control signalat a nominal signal level, the temperature compensating circuit beingcoupled to receive the attenuation control signal from the constant DCsignal source, wherein the attenuation control adjustment signal adjuststhe signal level of the attenuation control signal from the nominalsignal level; and the control circuit being operably associated with thetemperature compensating circuit to receive the attenuation controlsignal after adjustment by the attenuation control adjustment signal. 5.The temperature compensating attenuator of claim 1, wherein: the firstplurality of stacked transistors is coupled to provide the first seriesconnected attenuation circuit segment with a first variable impedancelevel having a first continuous impedance range; and the secondplurality of stacked transistors is coupled to provide the first shuntconnected attenuation circuit segment with a second variable impedancelevel having a second continuous impedance range; wherein the firstattenuation level of the first attenuation circuit is a first variableattenuation level having a first variable attenuation range, the firstvariable attenuation level being based on the first variable impedancelevel and the second variable impedance level.
 6. The temperaturecompensating attenuator of claim 5, further comprising: a variablesignal source operable to generate the attenuation control signal sothat the attenuation control signal has a variable signal level that isvariable within a continuous signal range, the temperature compensatingcircuit being coupled to receive the attenuation control signal from thevariable signal source, wherein the attenuation control adjustmentsignal adjusts the variable signal level of the attenuation controlsignal; and the control circuit being operably associated with thetemperature compensating circuit to receive the attenuation controlsignal after adjustment by the attenuation control adjustment signal. 7.The temperature compensating attenuator of claim 6, wherein the variablesignal source comprises a variable DC voltage source, the variablesignal level being a variable DC voltage level and the continuous signalrange being a continuous voltage range.
 8. The temperature compensatingattenuator of claim 1, wherein the temperature compensating circuitfurther comprises an amplifier having a gain and being operable toamplify the comparison signal based on the gain to generate theattenuation control adjustment signal.
 9. The temperature compensatingattenuator of claim 1, further comprising: a first resistive circuitcoupled between the first plurality of stacked transistors and thecontrol circuit, wherein the first resistive circuit has a resistancesignificantly above a first impedance level of the first seriesconnected attenuation circuit segment; and a second resistive circuitcoupled between the second plurality of stacked transistors and thecontrol circuit, wherein the second resistive circuit has a resistancesignificantly above a second impedance level of the first shuntconnected attenuation circuit segment.
 10. The temperature compensatingattenuator of claim 1, wherein the first attenuation circuit furthercomprises: an additional attenuation circuit segment having a thirdplurality of stacked transistors; wherein the first series connectedattenuation circuit segment, the first shunt connected attenuationcircuit segment, and the additional attenuation circuit segment areconfigured so that the first attenuation circuit is arranged in either aTee type configuration or a Pi type configuration; and wherein thecontrol circuit is also operably associated with the third plurality ofstacked transistors to control the first attenuation level based on thesignal level of the attenuation control signal.
 11. The temperaturecompensating attenuator of claim 10, wherein each of the first pluralityof stacked transistors, each of the second plurality of stackedtransistors, and each of the third plurality of stacked transistors hasa transistor body.
 12. The temperature compensating attenuator of claim11, wherein the transistor bodies of at least one of the first, second,and third plurality of stacked transistors are coupled to a ground node.13. The temperature compensating attenuator of claim 11, furthercomprising: a first biasing circuit coupled between the transistorbodies of the first plurality of stacked transistors; a second biasingcircuit coupled between the transistor bodies of the second plurality ofstacked transistors; and a third biasing circuit coupled between thetransistor bodies of the third plurality of stacked transistors; whereinthe control circuit is operably associated with the first, second, andthird biasing circuits to set a bias level for the transistor bodies.14. The temperature compensating attenuator of claim 10, wherein: thefirst plurality of stacked transistors comprises a first plurality ofstacked field effect transistors (FETs); the second plurality of stackedtransistors comprises a second plurality of stacked FETs; and the thirdplurality of stacked transistors comprises a third plurality of stackedFETs.
 15. The temperature compensating attenuator of claim 14, wherein:each of the first plurality of stacked FETs further comprises a sourceterminal, a drain terminal, and a gate terminal, wherein the sourceterminals and the drain terminals of the first plurality of stacked FETSare coupled in series and the gate terminals of each of the firstplurality of stacked FETS are coupled to the control circuit; each ofthe second plurality of stacked FETs further comprises a sourceterminal, a drain terminal, and a gate terminal, wherein the sourceterminals and the drain terminals of the second plurality of stackedFETS are coupled in series and the gate terminals of each of the secondplurality of stacked FETS are coupled to the control circuit; and eachof the third plurality of stacked FETs further comprises a sourceterminal, a drain terminal, and a gate terminal, wherein the sourceterminals and the drain terminals of the third plurality of stacked FETsare coupled in series and the gate terminals of each of the thirdplurality of stacked FETs are coupled to the control circuit.
 16. Thetemperature compensating attenuator of claim 15, the first, second, andthird plurality of stacked FETs being formed on one or more substrates,each of the one or more substrates being selected from a groupconsisting of a silicon-on-insulator type substrate, and asilicon-on-sapphire type substrate.
 17. The temperature compensatingattenuator of claim 16, further comprising: a first resistive circuitcoupled to each of the gate terminals of the first plurality of stackedFETs and the control circuit, wherein the first resistive circuit has ahigh resistance so that a parasitic capacitance of each of the firstplurality of stacked FETs is negligible; a second resistive circuitcoupled to each of the gate terminals of the second plurality of stackedtransistors and the control circuit, wherein the second resistivecircuit has a high resistance so that a parasitic capacitance of each ofthe second plurality of stacked FETs is negligible; and a thirdresistive circuit coupled to each of the gate terminals of the thirdplurality of stacked transistors and the control circuit, wherein thethird resistive circuit has a high resistance so that a parasiticcapacitance of each of the third plurality of stacked FETs isnegligible.
 18. The temperature compensating attenuator of claim 1,further comprising: a second attenuation circuit coupled to the firstattenuation circuit, the second attenuation circuit having a secondattenuation level, the second attenuation circuit comprising: a secondseries connected attenuation circuit segment having a third plurality ofstacked transistors; and a second shunt connected attenuation circuitsegment having a fourth plurality of stacked transistors; wherein thecontrol circuit is operably associated with the third plurality ofstacked transistors and the fourth plurality of stacked transistors tocontrol the second attenuation level based on the signal level of theattenuation control signal.
 19. The temperature compensating attenuatorof claim 18, further comprising: the first attenuation circuit furthercomprising a first additional attenuation circuit segment having a fifthplurality of stacked transistors, wherein the first series connectedattenuation circuit segment, the first shunt connected attenuationcircuit segment, and the first additional attenuation circuit segmentare configured so that the first attenuation circuit is arranged ineither a Pi type configuration or a Tee type configuration; the secondattenuation circuit further comprising a second additional attenuationcircuit segment having a sixth plurality of stacked transistors whereinthe second series connected attenuation circuit segment, the secondshunt connected attenuation circuit segment, and the second additionalattenuation circuit segment are configured so that the secondattenuation circuit is arranged in either a Pi type configuration or aTee type configuration; wherein the control circuit is also operablyassociated with the fifth plurality of stacked transistors to controlthe first attenuation level based on the signal level of the attenuationcontrol signal and the control circuit is also operably associated withthe sixth plurality of stacked transistors to control the secondattenuation level based on the signal level of the attenuation controlsignal.
 20. A method of reducing temperature variations in anattenuation level of an attenuator, comprising: providing a firstattenuation circuit having: a first series connected attenuation circuitsegment having a first plurality of stacked transistors; and a firstshunt connected attenuation circuit segment having a second plurality ofstacked transistors; receiving an attenuation control signal;controlling the first plurality of stacked transistors and the secondplurality of stacked transistors to set a first attenuation level of thefirst attenuation circuit based on a signal level of the attenuationcontrol signal; generating a first operating temperature signal having asignal level related to an operating temperature associated with thefirst attenuation circuit; generating a reference signal at a referencelevel; comparing the signal level of the first operating temperaturesignal and the reference signal to detect a difference between thesignal level of the first operating temperature signal and the referencelevel; generating an attenuation control adjustment signal having asignal level related to the difference between the signal level of thefirst operating temperature signal and the reference level so as to bebased on the operating temperature; and adjusting the signal level ofthe attenuation control signal based on the signal level of theattenuation control adjustment signal.
 21. The method of claim 20,wherein: comparing the signal level of the first operating temperaturesignal and the reference signal to detect the difference between thesignal level of the first operating temperature signal and the referencelevel further comprises generating a comparison signal having a signallevel related to the difference between the signal level of the firstoperating temperature signal and the reference level; and generating theattenuation control adjustment signal further comprises amplifying thecomparison signal based on a gain to generate the attenuation controladjustment signal.
 22. A temperature compensating attenuator,comprising: a first attenuation circuit having a first attenuationlevel, the first attenuation circuit comprising: a first seriesconnected attenuation circuit segment having a first plurality ofstacked transistors that are coupled to provide the first seriesconnected attenuation circuit segment with a first impedance level; anda first shunt connected attenuation circuit segment having a secondplurality of stacked transistors that are coupled to provide the firstshunt connected attenuation circuit segment with a second impedancelevel; wherein the first attenuation level is based on the first andsecond impedance levels; a control circuit adapted to generate a firstseries segment control signal and a first shunt segment control signal,the control circuit being operably associated with the first pluralityof stacked transistors to control the first impedance level based on asignal level of the first series segment control signal, and the controlcircuit being operably associated with the second plurality of stackedtransistors to control the second impedance level based on a signallevel of the first shunt segment control signal; a first temperaturecompensating circuit operable to generate a first attenuation controladjustment signal having a signal level related to a first operatingtemperature associated with the first series connected attenuationcircuit segment, the first temperature compensating circuit beingoperably associated with the control circuit so that the first seriessegment control signal is adjustable based on the signal level of thefirst attenuation control adjustment signal, wherein the firsttemperature compensating circuit further comprises: a first operatingtemperature circuit operable to generate a first operating temperaturesignal having a signal level related to the first operating temperatureassociated with the first attenuation circuit; a first reference circuitoperable to generate a first reference signal at a first referencelevel; and a first comparator circuit adapted to receive the firstoperating temperature signal and the first reference signal, the firstcomparator circuit being operable to generate the first attenuationcontrol adjustment signal based on a difference between the signal levelof the first operating temperature signal and the first reference levelwhereby the difference between the signal level of the first operatingtemperature signal and the first reference level is associated with atemperature change in the first operating temperature; and a secondtemperature compensating circuit operable to generate a secondattenuation control adjustment signal having a signal level related to asecond operating temperature associated with the first shunt connectedattenuation circuit segment, the second temperature compensating circuitbeing operably associated with the control circuit to adjust the signallevel of the first shunt segment control signal based on the signallevel of the second attenuation control adjustment signal; and whereinthe first attenuation circuit is formed on one or more substrates, eachof the one or more substrates being selected from a group consisting ofa silicon-on-insulator type substrate and a silicon-on-sapphire typesubstrate.
 23. The temperature compensating attenuator of claim 22,wherein each of the first plurality of stacked transistors and each ofthe second plurality of stacked transistors are selected from a groupconsisting of a metal oxide semiconductor field effect transistor, ametal semiconductor field effect transistor, and a heterostructure fieldeffect transistor.